Asahi Kasei Kogyo Kabushiki Kaisha

Kaoru Takasuka

Hidehiko Kobayashi

Tatsumi Arakawa

Fumio Matushita

Masatatsu Takahashi

Sadaji Nishimura

A novel semiconductor device having an oxide semiconductor layer between an amorphous silicon hydride and a metallic layer has been found to have an excellent collection efficiency for light, particularly, in the range of short wavelengths and a high energy conversion efficiency as compared with the conventional Schottky barrier semiconductor device and the semiconductor device having a MIS structure. Further, it has been found that the present novel semiconductor device has an excellent storage stability for a long period of time.

Semiconductor device

Disclosed is a non-woven fabric defect detecting device in which light is applied to a travelling non-woven fabric to optically or electrically scan the non-woven fabric in its widthwise direction and the light from each point on the non-woven fabric is converted into an electric signal. The converted electric signal is classified into a plurality of levels to detect at least a hole and a heavy filling bar. The durations of these detected outputs are counted in the form of clocks and grading of the quality of the non-woven value is achieved based on the count values. The abovesaid converted output is differentiated and the differentiated output above a predetermined level is detected as fold bar.

Growing community of inventors

Fuji, Japan

Kaoru Takasuka