Sumitomo Electric Industries, Limited

Kaoru Shibata

Katsushi Akita

Kei Fujii

Takashi Kyono

Koji Nishizuka

Hiromi Nakanishi

Takashi Ishizuka

Hideyuki Ijiri

An optical module includes a transmitting member. The transmitting member is fixed to a cap member so as to cover a through-hole. On the assumption that the height of one point on a first surface in a state in which the transmitting member is detached from the cap member is zero and the direction toward the outside of the optical module is a positive direction, the amount of warp that is a difference between the displacement at the central point and the displacement at a standard point, on the first surface, corresponding to a reference point, on the projection image, away from a center of gravity by a particular distance is different between a first geodesic line and a second geodesic line, the displacement being a height of the one point in a direction of the optical axis in a state in which the transmitting member is fixed to the cap member. The transmitting member is joined to the cap member at the first surface or the second surface.

Optical module

A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate and formed of a III-V compound semiconductor, and a quantum well layer disposed on and in contact with the buffer layer and including a plurality of component layers formed of III-V compound semiconductors. The substrate has a diameter of 55 mm or more. At least one of the component layers is formed of a mixed crystal of three or more elements. When the compound semiconductor forming the substrate has a lattice constant d, the compound semiconductor forming the buffer layer has a lattice constant d, and the compound semiconductors forming the quantum well layer have an average lattice constant d, (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less, and (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less.

Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor device

An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5&#xd7;10cm.

Epitaxial wafer and method for manufacturing same

An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of (100) and an off angle of &#x2212;0.030&#xb0; or more and +0.030&#xb0; or less, and a surface of the top layer has a root-mean-square roughness of less than 10 nm.

Epitaxial wafer, method for producing the same, semiconductor element, and optical sensor device

A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure.

Semiconductor device and method for manufacturing the same

A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a III-V semiconductor substrate, the epitaxial layer structure including a III-V semiconductor multiple-quantum well and a III-V semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is performed such that a lattice mismatch &#x394;&#x3c9; of the multiple-quantum well with respect to the substrate satisfies a range of &#x2212;0.13%&#x2266;&#x394;&#x3c9;&#x3c;0% or 0%&#x3c;&#x394;&#x3c9;&#x2266;+0.13%, the range having a center displaced from zero, and an X-ray rocking curve in a zero-order diffraction peak derived from the multiple-quantum well has a full width at half maximum (FWHM) of 30 seconds or less.

Epitaxial wafer, method for producing the same, photodiode, and optical sensor device

A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than or equal to 3 &#x3bc;m and less than or equal to 8 &#x3bc;m, the semiconductor device having a dark current density of less than or equal to 1&#xd7;10A/cmwhen a reverse bias voltage of 60 mV is applied at a temperature of &#x2212;140&#xb0; C. Thereby, a semiconductor device which can receive light in a mid-infrared range and has a low dark current is provided.

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Itami, Japan

Kaoru Shibata