Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Kaoru Saigoh

Kouichi Nagai

Naoya Sashida

Hitoshi Saito

Kazuhiro Asai

Makoto Takahashi

Kenichi Inoue

Satoru Mihara

Yukinobu Hikosaka

Yasutaka Ozaki

Jirou Miura

Takeyasu Saito

Katsuhiro Sato

Tatsuya Yokota

Yukimasa Miyazaki

Yoshinori Obata

Koji Tani

Tatsuro Osada

Kaoru Sugawara

Hideaki Suzuki

Masashi Shima

Nobuhiro Misawa

Kazutoshi Izumi

Hirokazu Yamazaki

Takao Sasaki

Hisashi Miyazawa

Masahito Kudou

Masahito Kudo

A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric capacitors formed in the lamination of insulator; wiring structure formed in the lamination of insulator and connected to the semiconductor elements and the ferro-electric capacitors; pad electrodes connected to the wiring structure, formed in the lamination of insulator and exposed in the openings of the passivation film; a conductive pad protection film, including a Pd film, covering each pad electrode via the opening of the passivation film, and extending on the passivation film; and stud bump or bonding wire connected to the pad electrode via the conductive pad protection film.

Semiconductor device with pads of enhanced moisture blocking ability

A semiconductor device includes a transistor array including a plurality of transistors each having a gate electrode extended in a first direction, the plurality of transistors being arranged in a second direction intersecting the first direction, and a pad electrode arranged in the first direction of the transistor array and electrically connected to source regions of the plurality of transistors.

Semiconductor device

An insulation film () having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor () is formed. Thereafter, an alumina film () is formed on the insulation film (). According to the method, low coverage of the alumina film () does not become a problem, and the ferroelectric capacitor () is reliably protected.

Semiconductor device and manufacturing method thereof

After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an AlOfilm is formed.

Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same

A method of manufacturing a semiconductor device includes forming a wiring layer in a first insulating layer, forming a second insulating layer over the first insulating layer, forming a first conductive layer over the second insulating layer, forming a dielectric layer on the first conductive layer, forming a second conductive layer on the dielectric layer, selectively removing the second conductive layer to form an upper electrode on the dielectric layer, forming a first layer over the upper electrode and the dielectric layer, selectively removing the first layer, the dielectric layer, and the first conductive layer to form a lower electrode over which the dielectric layer and the first layer is entirely left, the upper electrode remaining partially over the lower electrode.

Method of manufacturing semiconductor device

A protective film () having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode () while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrO: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure () may be realized only by a simple configuration.

Semiconductor device and method of fabricating the same

A semiconductor device including a capacitor formed over a semiconductor substrate and including a lower electrode, a dielectric film formed over the lower electrode and an upper electrode formed over the dielectric film, an insulation film formed over the semiconductor substrate and the capacitor, and an electrode pad formed over the insulation film and including an alloy film of aluminum and magnesium.

Semiconductor device and method for manufacturing the same

An ultra-thin semiconductor chip of an FeRAM, which is miniaturized and highly integrated with characteristic degradation of a ferroelectric capacitor suppressed though a thin package structure is applied to the FeRAM is realized. The semiconductor chip is molded up by using a sealing resin with a filler content set at a value in a range of 90 weight % to 93 weight % to produce a package structure.

Semiconductor device having a ferroelectric capacitor

A method of manufacturing a semiconductor device has forming a capacitor having electrodes and a ferroelectric film provided therebetween above a substrate, forming a pad electrode electrically connected to one of the electrodes of the capacitor above the substrate, forming a protective film covering the pad electrode over the substrate, forming an opening in the protective film exposing at least a part of the pad electrode, bringing a measurement terminal into contact with the exposed surface of the pad electrode, etching the surface of the pad electrode after the measurement terminal is brought into contact therewith, and forming a hydrogen absorbing film on the protective film and the pad electrode exposed through the opening.

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device having a ferroelectric capacitator

A semiconductor device includes a semiconductor substrate, a circuit part formed on and above the semiconductor substrate, a passivation film covering the circuit part, an electrode pad provided outside the circuit part in such a manner that the electrode pad is exposed from the passivation film, and a guard ring pattern provided between the electrode pad and the circuit part such that the guard ring pattern surrounds the circuit part substantially. The guard ring pattern extends from a surface of the semiconductor substrate to the passivation film.

Semiconductor device and fabrication method thereof

The present invention relates to a semiconductor device having capacitors. The configuration of the device includes: capacitor upper electrodesformed via a dielectric filmon plate linesthat become capacitor lower electrodes; a conductive connecting sectionsthat are connected to one ends of the plate linesand have contact regions; upper conductive patternsthat are formed between the contact regions and the edge of plate lineson the dielectric filmon the conductive connecting sectionsand are in the same layer as the capacitor upper electrodes

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Kawasaki, Japan

Kaoru Saigoh