Nec Corporation

Nec Electronics Corporation

Renesas Electronics Corporation

Tdk Corporation

National Institute of Advanced Industrial Science and Technology

Tanaka Chemical Corporation

Kaoru Narita

Takeo Fujii

Taras Kushta

Tomoyuki Kaneko

Takanori Saeki

Hirokazu Tohya

Hiroyuki Hirano

Keiji Suzuki

Yoko Horiguchi

Ryota Yuge

Shin-ichi Ogou

Noriyuki Tamura

Mitsuharu Tabuchi

Toshihiko Oyama

Takahiro Moriya

Tomo Tanaka

Seiji Fukuoka

Hideka Shibuya

Takashi Ohtomo

Naoki Kawano

An object of the present invention is to provide an infrared sensor having a high TCR value, and a method for manufacturing the infrared sensor. The infrared sensor comprises a substrate, a first electrode on the substrate, a second electrode spaced from the first electrode on the substrate, and a carbon nanotube layer electrically connected with the first electrode and the second electrode, wherein the carbon nanotube layer comprises semiconducting carbon nanotubes in an amount more than 66% by mass based on the total amount of carbon nanotubes and 60% or more of the carbon nanotubes contained in the carbon nanotube layer have a diameter within a range of 0.6 to 1.5 nm and a length within a range of 100 nm to 5 μm.

Infrared sensor using carbon nanotubes and method for manufacturing same

A lithium-manganese composite oxide represented by formula (1): Li[(FeNi)Mn]O(1) wherein x, y, and z satisfy the following: 0&#x3c;x&#x2264;&#x2153;, 0&#x2264;y&#x3c;1.0, and 0&#x3c;z&#x2264;0.6, and wherein the content ratio of Li to the total content of Fe, Ni, and Mn (Li/(Fe+Ni+Mn)) is 1.55 or less on a molar ratio basis, the lithium-manganese composite oxide containing a crystalline phase having a layered rock-salt structure. This composite oxide is a novel material made from less resource-constrained and cheaper elements, and exhibits a high specific capacity, excellent charge-and-discharge cycle characteristics, and a high discharge capacity at a high current density (excellent rate characteristics), when used in the positive electrode material for lithium-ion secondary batteries.

Lithium-manganese complex oxide and method for producing same

A position detecting device includes a first bias magnet and a second bias magnet and a detecting element configured to detect a direction of a magnetic field generated by the first magnet and the second magnet. The first magnet and the second magnet are disposed with magnetic poles thereof having the same polarity arranged opposing each other. The direction of the magnetic field detected by the detecting element changes when an object to be detected D moves in an opposing direction between the first magnet and the second magnet.

Position detecting device and structure for using position detecting device

A process for producing a carbon nanotube resistor that is capable of providing a highly reliable resistor or fuse. The process comprises the step of introducing a carbon nanotube in a volatile solvent to a first concentration and conducting ultrasonic treatment thereof to thereby obtain an initial solution; the dilution step of stepwise diluting the initial solution with a volatile solvent under ultrasonication so as to adjust the same to a second concentration, thereby obtaining a coating solution; and the step of applying the coating solution between a first electrode and a second electrode, wherein the first concentration is 1(E10g/ml or higher and the second concentration lower than 1(E10g/ml.

Carbon nanotube resistor, semiconductor device, and manufacturing method thereof

According to one embodiment, a broadband transition to joint a via structure and a planar transmission line in a multilayer substrate is formed as an intermediate connection between the signal via pad and the planar transmission line disposed at the same conductor layer. The transverse dimensions of the transition are equal to the via pad diameter at the one end and strip width at another end; the length of the transition can be equal to the characteristic dimensions of the clearance hole in the direction of the planar transmission line or defined as providing the minimal excess inductive reactance in time-domain according to numerical diagrams obtained by three-dimensional full-wave simulations.

Broadband transition from a via interconnection to a planar transmission line in a multilayer substrate

Provided are vertical transitions which have the high electrical performance and the high shielding properties in the wide frequency band in a multilayer PCB, printed circuit boards with the vertical transitions and semiconductor packages with the printed circuit boards and semiconductor chips. In vertical transitions for a multilayer PCB, a wave guiding channel is a conductor which includes at least more than one of signal vias, an assembly of ground viassurrounding the signal via, ground plates from conductor layers of the PCB connected to the ground vias, closed ground striplinesconnecting the ground vias and power supply layer.

Vertical transitions, printed circuit boards therewith and semiconductor packages with the printed circuit boards and semiconductor chip

According to one embodiment, a broadband transition to joint a via structure and a planar transmission line in a multilayer substrate is formed as an intermediate connection between the signal via pad and the planar transmission line disposed at the same conductor layer. The transverse dimensions of the transition are equal to the via pad diameter at the one end and strip width at another end; The length of the transition can be equal to the characteristic dimensions of the clearance hole in the direction of the planar transmission line or defined as providing the minimal excess inductive reactance in time-domain according to numerical diagrams obtained by three-dimensional full-wave simulations.

A plurality of through-hole vias connected to conductor layers is disposed with gaps left between these vias around opening parts disposed in the conductor layers in a printed board in which these conductor layers are disposed parallel to each other so as to sandwich a dielectric layer in between. Furthermore, through-hole vias used for excitation are disposed in the opening parts of the conductor layers and regions of the dielectric layer matching these opening parts in a non-contact manner with the conductor layers. When the complex dielectric constant is measured, a high-frequency power is applied to the through-hole vias, and the power loss between the through-hole vias and the conductor layers is measured by the S parameter method. As a result, the complex dielectric constant and the frequency dependency of this complex dielectric constant can be measured with a high precision in a frequency range extending from several gigahertzes to 20 GHz, and there is no electrical interference with other parts even when this resonator is mounted on a board.

Resonator, printed board, and method for measuring complex dielectric constant

A data transmitter uses a transmission line including a ground conductor (), a signal conductor (), and an insulating material () which insulates them from each other. The insulating material includes a dielectric () exhibiting a nonlinear relationship between a generated electric field and dielectric polarization. The effective reactance per unit length of the transmission line changes depending on the signal voltage. Data is transmitted between integrated circuits () via the transmission line, achieving data transmission at a higher speed than a conventional one.

Data transmitter, data transmission line, and data transmission method

A via transmission line for a multilayer printed circuit board (PCB) in which a wave guiding channel is formed by a signal via or a number of signal vias, an assembly of ground vias surrounding the signal via or corresponding number of coupled signal vias, a set of ground plates from conductor layers of the multilayer PCB, and a clearance hole. In this via transmission line, the signal via, or the number of signal vias forms an inner conductive boundary, ground vias and ground plates from conductor layers of the multilayer PCB form an outer conductive boundary, and the clearance hole provides both isolation of the inner conductive boundary from the outer conductive boundary and high-performance broadband operation of the via transmission line by means of the predetermined clearance hole cross-sectional shape and dimensions where the cross-sectional shape of the clearance hole is defined by the arrangement of ground vias in the outer conductive boundary and dimensions of the clearance hole are determined according to a method to minimize frequency-dependent return losses caused by specific corrugations of the outer conductive boundary formed by ground plates in the wave guiding channel of the via transmission line.

Via transmission lines for multilayer printed circuit boards

A compact via transmission line for a printed circuit board having preferred characteristic impedance and capable of miniaturizing the printed circuit board including a multilayer printed circuit board, and extending the frequency range of a via transmission line mounted on the printed circuit board, and a design method of the same. The transmission line has a central conductor forming an inner conductor layer boundary make up a signal via hole, a plurality of via holes arranged around the central conductor form an outer conductor layer boundary, and a plurality of conductor plates formed of a printed circuit board conductor layer, is further provided with a constitutive parameter adjustment clearance hole between the inner and outer conductor layer boundaries of the compact via transmission line, and electrically isolates to prevent cross-talk of a signal propagating through a signal via hole with other signals in a high-frequency signal band.

Compact via transmission line for printed circuit board and design method of the same

Compact via transmission line for printed circuit board and its designing method

A protection circuit prevents a circuit component from static charge unavoidably applied to a signal terminal, and includes a vertical bipolar transistor having an n-type deep well serving as an emitter region, a p-type well formed on the n-type deep well and serving as a base region and an n-type impurity region formed in the p-type well and serving as a collector region so as to reduce a base resistance regardless of a shallow trench isolation.

Semiconductor device having protection circuit implemented by bipolar transistor for discharging static charge current and process of fabrication

The distance between an anode and a cathode of a thyristor and the anode and the cathode of a diode formed in a semiconductor protective circuit are made a small as allowable by LSI manufacturing technology, thereby achieving fast starting speed and a low internal resistance when in the conducting condition, so as to limit the rise in voltage on an internal circuit, even when a high-speed pulse is applied.

Semiconductor protective device and method for manufacturing same

In a semiconductor circuit device, an internal circuit, a common wiring pattern, a plurality of external terminals including a ground terminal, and a plurality of protection elements is provided. Each of the plurality of protection elements is connected to one of the plurality of external terminals and the common wiring pattern. Each protection element includes a clamp circuit. The clamp circuit of each of the plurality of protection elements respectively connected to the plurality of external terminals other than the ground terminal has a clamp voltage higher than a power supply voltage supplied to the internal circuit. On the other hand, the clamp circuit of the protection element connected to the ground terminal as a ground terminal clamp circuit has a clamp voltage lower than those of the clamp circuits other than the ground terminal clamp circuit.

Growing community of inventors

Tokyo, Japan

Kaoru Narita