Canon Kabushiki Kaisha

Kyoto University

Tokyo Institute of Technology

National Institute of Advanced Industrial Science and Technology

University of Yamanashi

Tokyo University of Science Educational Foundation Administrative Organization

Sophia School Corporation

Sophia University

Kaoru Miura

Makoto Kubota

Kenichi Takeda

Atsushi Kimura

Jumpei Hayashi

Hisato Yabuta

Masaki Azuma

Takanori Matsuda

Hiroshi Funakubo

Takayuki Watanabe

Tatsuo Furuta

Satoshi Wada

Hiroshi Uchida

Miki Ueda

Nobuhiro Kumada

Takashi Iijima

Soichiro Okamura

Yuichi Shimakawa

Yoshihiko Matsumura

Toshihiro Ifuku

Tetsuro Fukui

Yasushi Shimizu

Hideaki Takahashi

Shunsuke Murakami

Kanako Oshima

Shintaro Yasui

Jun-ichi Nagata

Olga Alexandrovna Smirnova

Koji Suzuki

Hidenori Tanaka

Kenji Takashima

Shinya Koyama

Akira Uebayashi

Satoshi Fujita

Koichi Kitakami

Tomoaki Yamada

Keisuke Yazawa

Takahiro Oikawa

Jyunichi Nagata

Provided is a piezoelectric ceramics having a gradual change in piezoelectric constant depending on an ambient temperature. Specifically, provided is a single-piece piezoelectric ceramics including as a main component a perovskite-type metal oxide represented by a compositional formula of ABO, wherein an A site element in the compositional formula contains Ba and M, the Mbeing formed of at least one kind selected from the group consisting of Ca and Bi, wherein a B site element in the compositional formula contains Tand M, the Mbeing formed of at least one kind selected from the group consisting of Zr, Sn, and Hf, wherein concentrations of the Mand the Mchange in at least one direction of the piezoelectric ceramics, and wherein increase and decrease directions of concentration changes of the Mand the Mare directions opposite to each other.

Piezoelectric ceramics, manufacturing method for piezoelectric ceramics, piezoelectric element, vibration device, and electronic device

The present invention provides a lead-free piezoelectric material having a high piezoelectric constant over a wide operating temperature region. Therefore, the present invention relates to a piezoelectric material including a perovskite-type metal oxide represented by general formula (1) below as a main component, wherein the average valence, of Sn contained in the general formula (1) lies between 2 and 4.(BaCaSnTiZr)O(where 0.620&#x2264;&#x2264;0.970,0.010&#x2264;&#x2264;0.200,0.030&#x2264;&#x2264;0.230,0.865&#x2264;&#x2264;0.990,0&#x2264;&#x2264;0.085, and 1.986&#x2264;&#x2264;2.100)&#x2003;&#x2003;General Formula (1)

Piezoelectric material, piezoelectric element, and electronic apparatus

An ultrasonic motor includes an annular vibrator and an annular moving member that is brought into pressure-contact with the vibrator. The vibrator includes an annular vibrating plate and an annular piezoelectric element. The piezoelectric element includes an annular lead-free piezoelectric ceramic piece, a common electrode arranged on one surface of the piezoelectric ceramic piece, and a plurality of electrodes arranged on the other surface of the piezoelectric ceramic piece. The plurality of electrodes include two drive phase electrodes, one or more non-drive phase electrodes, and one or more detection phase electrodes. A second surface of the vibrating plate includes a plurality of groove regions extending radially, and the depths of the groove regions change in a circumferential direction along a curve obtained by superimposing one or more sine waves on one another. The ultrasonic motor exhibits a sufficient drive speed while suppressing generation of an unnecessary vibration wave.

Ultrasonic motor, drive control system, optical apparatus, and vibrator

Provided is a piezoelectric element containing no lead therein and having a satisfactory piezoelectric constant and a small dielectric loss tangent at room temperature (25&#xb0; C.) In order to attain this, the piezoelectric element includes a substrate, a first electrode, a piezoelectric film, and a second electrode. The piezoelectric film contains barium zirconate titanate, manganese, and trivalent bismuth. The piezoelectric film satisfies 0.02&#x2264;x&#x2264;0.13, where x is a mole ratio of zirconium to the sum of zirconium and titanium. A manganese content is 0.002 moles or more and 0.015 moles or less for 1 mole of barium zirconate titanate, and a bismuth content is 0.00042 moles or more and 0.00850 moles or less for 1 mole of barium zirconate titanate.

Piezoelectric element, piezoelectric actuator, and electronic apparatus

Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20&#xb0; C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (BiM)NiO(1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02&#x2264;x&#x2264;0.15.

Thermal expansion suppressing member and anti-thermally-expansive member

The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), at least one of Mn and Ni, and Mg. The content of Ni is 0 mol or more and 0.05 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mn is 0 mol or more and 0.005 mol or less based on 1 mol of the perovskite-type metal oxide, provided that the content of Mn and the content of Ni are not simultaneously 0 mol. The content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaBa)(NbTi)O(where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

Piezoelectric material, method of producing piezoelectric material, piezoelectric element, and electronic apparatus

The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), Zn, and Mg. The content of Zn is 0.005 mol or more and 0.050 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaBa)(NbTi)O(where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

Provided is a piezoelectric element including a substrate, electrodes, and a piezoelectric film, the piezoelectric film including an oxide including Ba, Ca, Ti, and Zr, and at least one element of Mn and Bi in which: 0.09&#x2266;x&#x2266;0.30 is satisfied, where x is a mole ratio of Ca to a sum of Ba and Ca; 0.025&#x2266;y&#x2266;0.085 is satisfied, where y is a mole ratio of Zr to a sum of Ti, Zr, and Sn; and 0&#x2266;z&#x2266;0.02 is satisfied, where z is a mole ratio of Sn to the sum of Ti, Zr, and Sn; a total content Sof Mn and Bi is 0.0020 moles or more and 0.0150 moles or less for 1 mole of the oxide; and a total content Sof Mn and Bi in a region of the piezoelectric film adjacent to one of the electrodes is smaller than S.

Piezoelectric element, method of manufacturing piezoelectric element, piezoelectric actuator, and electronic apparatus

Provided is a piezoelectric element containing no lead therein and having satisfactory and stable piezoelectric properties in a temperature range in which the piezoelectric element is used. In order to attain this, the piezoelectric element includes a substrate, a first electrode, a piezoelectric film, and a second electrode. The piezoelectric film contains barium zirconate titanate, manganese, and bismuth in a charge disproportionation state in which trivalent Bi and pentavalent Bi coexist. The piezoelectric film satisfies 0.02&#x2266;x&#x2266;0.13, where x is a mole ratio of zirconium to the sum of zirconium and titanium. A manganese content is 0.002 moles or more and 0.015 moles or less for 1 mole of barium zirconate titanate, and a bismuth content is 0.00042 moles or more and 0.00850 moles or less for 1 mole of barium zirconate titanate.

Piezoelectric element, piezoelectric actuator, and electronic apparatus using the same

A piezoelectric element includes a substrate, a first electrode, a piezoelectric film and a second electrode that are sequentially placed in the above-mentioned order. The piezoelectric film contains oxides of Ba, Bi, Ti, Zr, Fe and Mn and has a perovskite structure, wherein the molar ratio y of Bi relative to the sum of Ba and Bi is 0.001&#x2266;y&#x2266;0.015, the molar ratio x of Zr relative to the sum of Ti, Zr, Fe and Mn is 0.010&#x2266;x&#x2266;0.060, the molar ratio z of Fe relative to the sum of Ti, Zr, Fe and Mn is 0.001&#x2266;z&#x2266;0.015, and the molar ratio m of Mn relative to the sum of Ti, Zr, Fe and Mn is 0.0020&#x2266;m&#x2266;0.0150, while the relationship between y and z is expressed by 0.90&#x2266;y/z&#x2266;1.10.

Piezoelectric element, piezoelectric actuator and electronic instrument using the same

Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1).A(ZnTi)MO&#x2003;&#x2003;(1)wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4&#x2266;x&#x2266;0.6; and y represents a numerical value satisfying 0.1&#x2266;y&#x2266;0.9.

Metal oxide

There is provided a piezoelectric ceramic having a high and stable piezoelectric constant and a high and stable mechanical quality factor in a wide operating temperature range, and a piezoelectric element according to the present invention includes a main component containing a perovskite type metal oxide having the following general formula (1) or (2); and Mn as a first auxiliary component,(BaCa)(TiSnZr)O&#x2003;&#x2003;(1)(0.08&#x2266;x&#x2266;0.20, 0.01&#x2266;y&#x2266;0.04, 0&#x3c;z&#x2266;0.04)(BaCa)(TiSn)O&#x2003;&#x2003;(2)(0.08&#x2266;x&#x2266;0.20, 0.01&#x2266;y&#x2266;0.04)wherein the amount b (mol) of Mn per mole of the metal oxide is in the range of 0.0048&#x2266;b&#x2266;0.0400, and the value a of the general formula (1) or (2) is in the range of 0.9925+b&#x2266;a&#x2266;1.0025+b.

Piezoelectric ceramic, piezoelectric element, ultrasonic motor, and dust removing device

Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1):A(ZnTi)(MgTi)MO&#x2003;&#x2003;General formula (1)where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9&#x2266;x&#x2266;1.25, 0.4&#x2266;j&#x2266;0.6, 0.4&#x2266;k&#x2266;0.6, 0.09&#x2266;l&#x2266;0.49, 0.19&#x2266;m&#x2266;0.64, 0.13&#x2266;n&#x2266;0.48, and l+m+n=1 are satisfied.

Piezoelectric material and devices using the same

The piezoelectric element includes, on a substrate: a piezoelectric film; and a pair of electrodes provided in contact with the piezoelectric film; in which the piezoelectric film contains a perovskite-type metal oxide represented by the general formula (1) as a main component:A(ZnTi)(MgTi)MO&#x2003;&#x2003;General Formula (1)wherein the perovskite-type metal oxide is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction, of the pair of electrodes, a lower electrode provided on the substrate side is a multilayer electrode including at least a first electrode layer in contact with the substrate and a second electrode layer in contact with the piezoelectric film, and the second electrode layer is a perovskite-type metal oxide electrode which is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction.

Piezoelectric element, liquid discharge head and liquid discharge apparatus

A piezoelectric material contains a perovskite oxynitride expressed by the General Formula: (BaSr)(Ti(NbTa))(ON). In the formula, x, y, z and w are numerical values satisfying the relationships: 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x3c;z&#x3c;&#x3c;&#x2153;, and 0&#x3c;w&#x2266;z. Also, z can be 0.1&#x2266;z&#x2266;0.2. The piezoelectric material may be in the form of a film having a thickness in the range of 200 nm to 10 &#x3bc;m that is disposed on a substrate. The perovskite oxynitride may have a tetragonal crystal structure.

Piezoelectric material, piezoelectric element, liquid ejection head, ultrasonic motor, and dust removing device

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Matsudo, Japan

Kaoru Miura