Fujifilm Corporation

Fuji Photo Film Company, Limited

Kaoru Iwato

Keita Kato

Sou Kamimura

Yuichiro Enomoto

Shinji Tarutani

Kunihiko Kodama

Shuji Hirano

Kana Fujii

Hiroshi Saegusa

Shohei Kataoka

Yusuke Iizuka

Hidenori Takahashi

Kazuyoshi Mizutani

Michihiro Shirakawa

Akinori Shibuya

Toru Tsuchihashi

Atsushi Nakamura

Tadahiro Odani

Hiroo Takizawa

Hideaki Tsubaki

Takayuki Kato

Masaomi Makino

Kenji Wada

Shuhei Yamaguchi

Shinichi Sugiyama

Masahiro Yoshidome

Junichi Ito

Tomotaka Tsuchimura

Kazuto Kunita

Tadahiro Sorori

Kei Yamamoto

Toshiaki Fukuhara

Akio Oda

Naohiro Tango

Tomoyoshi Mitsumoto

Takuya Tsuruta

Hideo Miyake

Tomoki Matsuda

Shoichi Saitoh

Yoko Tokugawa

Yuko Yoshida

Kousuke Koshijima

Norihiko Taguchi

Takanobu Takeda

A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film

Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

Pattern forming method and resist composition

There is provided a pattern forming method comprising (a) a step of forming a film on a substrate using an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, (b) a step of forming a top coat layer on the film using a top coat composition containing a resin (T) containing at least any one of repeating units represented by formulae (I-1) to (I-5) shown below, (c) a step of exposing the film having the top coat layer using an electron beam or an extreme ultraviolet radiation, and (d) a step of developing the film having the top coat layer after the exposure to form a pattern.

Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device

Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

Method of forming pattern and developer for use in the method

Provided is a method of forming a pattern and an actinic-ray- or radiation-sensitive resin composition that excels in the limiting resolving power, roughness characteristics, exposure latitude (EL) and bridge defect performance. The method of forming a pattern includes (1) forming an actinic-ray- or radiation-sensitive resin composition into a film, (2) exposing the film to light, and (3) developing the exposed film with a developer containing an organic solvent. The actinic-ray- or radiation-sensitive resin composition contains (A) a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid, and (B) a solvent.

Pattern forming method and actinic-ray- or radiation-sensitive resin composition

A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): 

Resin composition and pattern forming method using the same

Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa&#x2267;&#x2212;1.5 when exposed to actinic rays or radiation.

Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same

Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &#x394;SP thereof represented by formula (1) below is 2.5 (MPa)or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent.&#x394;SP=SP&#x2212;SP&#x2003;&#x2003;(1)

According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition including 

Actinic ray- or radiation-sensitive resin composition, actinic ray- or radiation-sensitive film and method of forming pattern

There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device

A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device

There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer, wherein the electron beam-sensitive or extreme ultraviolet-sensitive resin composition contains (A) a resin containing (R) a repeating unit having a structural moiety capable of decomposing upon irradiation with an electron beam or an extreme ultraviolet ray to generate an acid, and (B) a solvent.

Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device

Disclosed are an actinic ray-sensitive or radiation-sensitive resin composition including (A) a compound capable of generating an acid by irradiation of actinic rays or radiation, and (B) a resin of which solubility in an alkali developer increases by being decomposed by the action of an acid, and, a resist film, a pattern forming method, an electronic device manufacturing method, and an electronic device, each using the composition, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains at least one type of a specific compound represented by General Formula (A-I) and at least one type of a specific compound represented by General Formula (A-II) as the compound (A).

Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the composition

There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

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Shizuoka, Japan

Kaoru Iwato