Kabushiki Kaisha Toshiba

Kaori Yomogihara

Makoto Honda

Hirokazu Ezawa

Hisashi Kaneko

Hideaki Harakawa

Hideto Matsuyama

Masanori Numano

Takahito Nagamatsu

Kazuhiro Murakami

Atsushi Shigeta

Takeo Kubota

An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NFor HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.

Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed

A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.

Peripheral processing method and method of manufacturing a semiconductor device

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Yokohama, Japan

Kaori Yomogihara