Nec Corporation

Gc Corporation

Nec Electronics Corporation

Kanto Kagaku Kabushiki Kaisha

Kaori Watanabe

Hidemitsu Aoki

Norio Ishikawa

Kiyoto Mori

Makoto Takahashi

Yasushi Sasaki

Kenji Kojima

Yuji Shimizu

Hiroshi Kitajima

Makoto Morita

Yoshimi Shiramizu

Hirofumi Seo

Daizaburo Mori

Masaharu Nakamori

Masatoshi Yoshinaga

Nahomi Ohta

Haruto Hamano

Yuji Fujimaki

Tsukasa Kaneko

Makoto Iuchi

Manami Kurakazu

Hiroyuki Itoh

Takatoshi Hattori

Toshikazu Shimizu

A packaging container includes a body part, a lid part integrally engaged with the body part, an inner lid positioned between the body part and the lid part, a stored item containing part opening from an engaged portion of the lid part that is engaged with the body part, and configured to contain a stored item, a chemical agent containing part opening from the engaged portion of the lid part that is engaged with the body part, the chemical agent containing part being formed separately from the stored item containing part, and a ventilation path in which the stored item containing part and the chemical agent containing part are in communication, the ventilation path being formed in an inner space defined by the first member and the second member.

Packaging container

A dental gypsum slurry includes water and a dental gypsum powder containing hemihydrate gypsum and a polycarboxylic acid salt-based water-reducing agent, wherein a powder-water ratio of the water to the dental gypsum powder is 0.24 to 0.50, and when the water and the dental gypsum powder being mixed are poured up to a height of 50 mm in a cylindrical mold having an inner diameter of 35 mm, which is vertically placed on a flat surface, and then, the cylindrical mold is pulled upward at 10 mm/s at 30 seconds after start of mixing so that a mixture spreads planarly, the diameter of the mixture is 141.4 mm or more.

Dental gypsum slurry

An embodiment of the present invention is an encased syringe in which a prefilled syringe is accommodated in a case. The prefilled syringe includes a cylindrical syringe body filled with a foamable material and a plunger pressed into the syringe body on one end side. The case includes a body accommodating part faulted to be depressed along the shape of the syringe body to accommodate the syringe body and a plunger accommodating part formed to be depressed along the shape of the plunger to accommodate the plunger. The length of the plunger accommodating part is smaller than the length of the plunger in an axial direction of the prefilled syringe.

Encased syringe

A method for manufacturing a semiconductor device or a semiconductor wafer using a chucking unit is provided to remove a slurry that adheres to the back surface of the semiconductor wafer. An edge portion of a semiconductor wafer is polished while a back surface of the semiconductor wafer is chucked to a chucking unit of a first polishing unit. The polished semiconductor wafer is then dechucked from the chucking unit of the first polishing unit. Next, a gap is formed above the chucking unit of the second polishing unit, and the semiconductor wafer is disposed therein. Water is discharged from the chucking unit of the second polishing unit to clean the back surface of the semiconductor wafer W. Thereafter, the back surface of the semiconductor wafer is chucked to the chucking unit of the second polishing unit, and the semiconductor wafer is polished.

Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit

A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The method comprises first and second process steps. The first process is wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali. The second process is wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.

Method for removing contamination and method for fabricating semiconductor device

A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained.

Tungsten metal removing solution and method for removing tungsten metal by use thereof

A method of collecting impurities existing on the surface of a semiconductor wafer and in a thin film formed on the semiconductor wafer is provided with a process for dripping collecting liquid on the surface of the semiconductor wafer to which hydrophobic processing is applied, a process for elongating the collecting liquid dripped and turned spherical by surface tension in a direction of the radius of the semiconductor wafer with the surface tension kept, a process for relatively rolling and scanning the elongated collecting liquid, touching the collecting liquid to the surface of the semiconductor wafer and incorporating impurities into the collecting liquid, a process for restoring the elongated collecting liquid to the original spherical shape after the impurities are incorporated and a process for withdrawing the collecting liquid restored to the spherical shape from the surface of the semiconductor wafer.

Method of collecting impurities on surface of semiconductor wafer

A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

Chemical solution treatment apparatus for semiconductor substrate

A ruthenium containing metal &prime; adhering to a periphery of a device forming area, an end face and a rear face in a silicon substrate is removed using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid. After the removing treatment, the substrate is washed with hydrofluoric acid to remove the residual remover.

Process for manufacturing a semiconductor device

A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

Remover for a ruthenium containing metal and use thereof

A mixed aqueous solution containing HCl with a concentration of 10 to 25% by weight, H O with a concentration of 2 to 5% by weight, and HF with a concentration of 0.01 to 2% by weight or a mixed aqueous solution containing H SO with a concentration of 65 to 82% by weight, H O with a concentration of 4 to 16% by weight, and HF with a concentration of 0.01 to 2% by weight is used as a platinum group impurity recovery liquid. The recovery liquid is dripped onto a silicon substrate surface or a film thereon so as to scan the entire surface of the substrate with the droplets. As a result, the platinum group impurity is dissolved into the recovery liquid, and the platinum group impurity is thus recovered.

Platinum group impurity recovery liquid and method for recovering platinum group impurity

The present invention relates to a cleaning solution which can reliably remove the platinum group metal (e.g. Pt or Ir) contaminants adhering on the silicon-based insulating film (e.g. silicon oxide film) formed on a semiconductor substrate and further can prevent the readhesion of the removed contaminants, as well as to a cleaning method using said cleaning solution. Since the cleaning solution consists of HPFM or SPFM which is a mixture of a hydrochloric acid-hydrogen peroxide (HPM) or sulfuric acid-hydrogen peroxide (SPM) solution with a very small amount of hydrofluoric acid, the contaminants adhering on the silicon-based insulating film can be reduced to a level lower than 1&times;10 atoms/cm .

Cleaning method for semiconductor substrate and cleaning solution

A process for producing, starting from a silicon substrate, a semiconductor device having a capacitor part comprising platinum group metal electrodes and a ferroelectric film, which process comprises a cleaning step of cleaning and removing the platinum group metal-derived contaminants adhering onto (1) the silicon-based insulating film formed in contact with the platinum group metal of the electrode(s) and (2) the back surface of the silicon substrate, by using a cleaning solution comprising a chemical solution for metal removal and very small amounts of hydrofluoric acid and a chelating agent. This process can remove platinum group metal-derived contaminants reliably and can prevent the re-adhesion of the once-removed contaminants.

Growing community of inventors

Tokyo, Japan

Kaori Watanabe