Stanley Electric Co., Ltd

Kaori Tachibana

Mitsunori Harada

Satoshi Ando

Toshifumi Watanabe

Ji-Hao Liang

Hiroshi Kotani

Kazuhiko Ueno

Takashi Ebisutani

Shunya Ide

Mamoru Yuasa

Kyotaro Koike

Kazuyoshi Taniguchi

Masao Aoyama

Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is &#x2159; or more the height of the translucent member in the direction perpendicular to the bottom surface.

Light-emitting device

To improve light emission efficiency and suppress color unevenness on a light emitting surface. Provided is a semiconductor light emitting device including a light emitting element, a wavelength conversion layer for converting light emitted from the light emitting element to light having a predetermined wavelength, a light reflection member covering at least the side surfaces of the wavelength conversion layer, and a thin film provided on the outermost surface from which the light wavelength-converted by the wavelength conversion layer exits, having a property for shedding the uncured light reflection member, and having a coarse surface.

Semiconductor light emitting device

A light-emitting device having light-emitting elements with high operation stability and light extraction efficiency is provided. The light-emitting device includes: a substrate; light-emitting elements aligned and arranged on the substrate in an arrangement direction; wavelength conversion layers each disposed on each of the light-emitting elements with a light-transmitting adhesive interposed therebetween, each of the wavelength conversion layers having an upper surface smaller than a bottom surface, and a side surface shape in which a length in a lateral direction parallel to the bottom surface and perpendicular to the arrangement direction decreases from the bottom surface toward the upper surface; a light-transmitting plate disposed over the wavelength conversion layers; and a reflective resin covering side surfaces of the light-emitting elements, the wavelength conversion layers, and the light-transmitting plate. A side surface of the wavelength conversion layer facing to another adjacent wavelength conversion layer extends in a direction perpendicular to the substrate.

A high-quality semiconductor light emitting device is provided, which include: a semiconductor light emitting element; and a light transmitting member disposed on or above the semiconductor light emitting element and including a wavelength conversion material at least in part. The light transmitting member includes: a first portion having side surfaces all being a vertical surface; a second portion disposed on the first portion and including an inclined surface on at least part of the side surfaces; and a third portion disposed on the second portion and having side surfaces all being a vertical surface. The third portion has an upper surface of which a size is smaller than a size of a lower surface of the first portion.

Semiconductor light emitting device and light transmitting member

A semiconductor light-emitting apparatus is constructed by a wiring substrate, at least one semiconductor light-emitting element provided on the wiring substrate, at least one wavelength-converting member provided on the semiconductor light-emitting element, and a light reflection adjusting member directly covering a sidewall of the semiconductor light-emitting element and a sidewall of the wavelength-converting member. The light reflection adjusting member is formed of gray resin including light reflecting fillers and light absorbing fillers for visible light.

Semiconductor light-emitting apparatus having light reflection adjusting member of gray resin and its manufacturing method

A method for manufacturing a semiconductor light-emitting apparatus includes: forming multiple eutectic material layers on multiple first electrode patterns, respectively, of a wiring substrate; mounting multiple semiconductor light-emitting elements on the multiple eutectic material layers, respectively; mounting a plate on the multiple semiconductor light-emitting elements via multiple eutectic temperature liquid layers, respectively, the multiple eutectic temperature liquid layers maintaining a liquid state even at a eutectic temperature of the multiple eutectic material layers; and heating and cooling the multiple eutectic material layers and the multiple temperature liquid layers while the plate is adhered via the multiple eutectic temperature liquid layers to the multiple semiconductor light-emitting elements by the surface tension phenomenon.

Semiconductor light-emitting apparatus having multiple semiconductor light-emitting elements and its manufacturing method

Methods for manufacturing semiconductor light-emitting devices and semiconductor light-emitting devices having a high radiating performance and can include a metallic laminate substrate, a semiconductor light-emitting chip and a transparent resin. The metallic laminate substrate can include a cavity so as to be able to accurately mount the light-emitting chip, and also can structures to efficiently radiate heat generated from the light-emitting chip. The transparent resin to encapsulate the semiconductor light-emitting chip in the cavity can include various wavelength converting materials. Additionally, the light-emitting devices can be manufactured in manufacturing processes similar to conventional light-emitting devices. Thus, the disclosed subject matter can provide semiconductor light-emitting devices having a high radiating performance and a high alignment accuracy, which can emit various color lights including a substantially white color tone, and therefore can be used as a light source for lighting units such as a vehicle headlight, general light, a stage lighting, etc.

Method for manufacturing semiconductor light-emitting device and semiconductor light-emitting device

A light emitting device comprises a substrate having a plurality of light emitting elements mounted thereon; a side wall structure having a partition wall portion separating a plurality of light emitting areas that each include at least one of the light emitting elements; and encapsulating resin filled in the light emitting areas to bury the light emitting elements therein. The side wall structure is separated by a space from the substrate at, at least, the partition wall portion so as to be in noncontact with the substrate, and the encapsulating resin is formed so as to integrally, continuously fill the light emitting areas and the space without producing any interface therein.

Light emitting device and manufacturing method thereof

A semiconductor light emitting device and method of manufacturing the same can provide a light source that has less variation in color and brightness and can reduce radiation of light that is possibly harmful to humans. The device can include a casing that has a first cavity having an oblique surface with a reflective surface formed thereon and a second cavity having an almost vertical side. A reflective frame having an oblique surface with a third reflective surface formed thereon can be formed on the casing. A semiconductor light emitting element can be mounted on the bottom in the first cavity. A first resin composed of a light-transmissive resin can be filled in the first cavity and then cured. Further, a second resin containing a fluorescent material dispersed in a light-transmissive resin can be filled in the second cavity and then cured while the casing is turned upside down to form a high-density fluorescent material layer near the surface of the second resin.

Semiconductor light emitting device having first and second resins

The disclosed subject matter includes light sources that have a high luminous flux and a favorable bright distribution, and includes vehicle lamps that have both a favorable light distribution pattern and a capability of being miniaturized by using the LED light sources. The light source can include a base board, a reflector having a cavity with a slender rectangular opening, a plurality of semiconductor light emitting chips located in a line in the cavity, and an encapsulating resin in the cavity. At least one chip among the plurality of semiconductor light emitting chips can be located on a central bottom portion of the cavity. The cavity can have one slant angle in a direction of a short side that is smaller than another slant angle. The vehicle lamp can include the light source, a shield plate, an optical lens, and reflectors that are selected according to a kind and/or design of a vehicle lamp.

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Tokyo, Japan

Kaori Tachibana