Renesas Electronics Corporation

Kaori Sumitomo

Hiroshi Horibe

Hideyuki Arakawa

Yasuki Takata

There is provided a technology capable of suppressing the damage applied to a pad. When the divergence angle of an inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is very small in magnitude. In other words, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is sufficiently smaller in magnitude than the ultrasonic conversion load in a direction in parallel with the surface of the pad. Consequently, when the divergence angle of the inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad can be sufficiently reduced in magnitude, which can prevent pad peeling.

Semiconductor device and a manufacturing method thereof

Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (&#x3b1; portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.

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Kanagawa, Japan

Kaori Sumitomo