Hitachi-high-technologies Corporation

Hitachi, Ltd.

Kaori Shirahata

Yasunari Sohda

Makoto Sakakibara

Hajime Kawano

Hideyuki Kazumi

Daisuke Bizen

Keiichiro Hitomi

Muneyuki Fukuda

Yoshinori Nakayama

Momoyo Enyama

Takeyoshi Ohashi

Yasuhiro Shirasaki

A charged particle detector including a scintillator that is irradiated with charged particles, a fluorescent film being in contact with a first surface facing a second surface of the scintillator, the second surface being irradiated with the charged particles, and a photodetector that detects luminescence of the fluorescent film, wherein the fluorescent film has a plurality of regions, the plurality of regions respectively have phosphors that absorb luminescence of the scintillator and emit light with different wavelengths from one another, and a charged particle beam device using the charged particle detector.

Charged particle detector and charged particle beam device using the same

The scanning electron microscope includes: an electron source; a first deflector for deflecting a primary electron beam emitted from the electron source; a second deflector for focusing the primary electron beam deflected by the first deflector and deflecting a second electron from a sample, which is generated the focused primary electron beam, to the outside of the optical axis; a voltage applying unit for applying a negative voltage to the sample to decelerate the primary electron beam; a spectrometer for dispersing the secondary electron; a detector for detecting the secondary electron passing through the spectrometer; an electrostatic lens provided between the second deflector and the spectrometer; and a voltage control unit that controls the voltage applied to the electrostatic lens based on the negative voltage applied to the sample. The electrostatic lens allows the deflecting action to be overlapped with the converging action.

Scanning electron microscope and method for controlling same

Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample.

Pattern critical dimension measurement equipment and method for measuring pattern critical dimension

Provided is a high-resolution scanning electron microscope with minimal aberration, and equipped with an electro-optical configuration that can form a tilted beam having wide-angle polarization and a desired angle, without interfering with an electromagnetic lens. In the scanning electron microscope, an electromagnetic deflector () is disposed above a magnetic lens (), and a control electrode () that accelerates or decelerates electrons is provided so at to overlap (in such a manner that the height positions overlap with respect to the vertical direction) with the electromagnetic deflector (). In wide field polarization, electrodes are accelerated, and in tilted beam formation, electrons are decelerated.

Scanning electron microscope and inspection method using same

In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun (), a deflection control portion () which allows an electron beam to scan, a focus control portion () and an astigmatism correction portion () for the electron beam, an image processing portion (), and a switching portion () which switches scan conditions when obtaining pattern information of the sample () surface and scan conditions when performing the automatic focus/astigmatism correction, and a scan speed and scan procedures are switched between when obtaining the pattern information and when performing the automatic focus/astigmatism correction.

Growing community of inventors

Tokyo, Japan

Kaori Shirahata