Sanyo Electric Co., Ltd.

Renesas Technology Corp.

Sony Corporation

Kaori Misawa

Hideki Mizuhara

Hiroyuki Watanabe

Masaki Hirase

Hiroyuki Aoe

Naofumi Ohashi

Isao Matsumoto

Seiichi Kondo

Takashi Yunogami

Kazunori Fujita

Ryu Shimizu

Hayato Nakashima

Hong Jae Shin

Atsushi Matsushita

Mamoru Arimoto

Kazuaki Inukai

Hiroyasu Ishihara

Koichi Abe

Shunichi Tokitoh

Takashi Nasuno

Shuji Sone

Haruaki Sakurai

An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

Image sensor and sensor unit

This image sensor comprises a plurality of pixel electrodes, a photoelectric conversion film arranged on the plurality of pixel electrodes, a dummy electrode formed on an end of the photoelectric conversion film for ejecting charges generated in the vicinity of the end of the photoelectric conversion film and a first transistor for controlling ejection of charges flowing into the dummy electrode.

Image sensor including a photoelectric conversion film

Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NHgas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.

Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device

After applying a film-forming composition containing a polysiloxane, a pore-forming agent, an onium salt, and a solvent onto a semiconductor substrate, the solvent is evaporated from the film-forming composition in a first heat treatment. Then, a second heat treatment is carried out in an inert-gas atmosphere to promote the polymerization of the polysiloxane and thus form a polysiloxane resin film. Thereafter, a third heat treatment is carried out in an oxidizing-gas ambient to form pores in the polysiloxane resin film.

Method for forming porous film

A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.

Method of manufacturing semiconductor device

A heat treatment is performed to an insulating film composition, formed on a semiconductor substrate, at a temperature of 350&#xb0; C. in an inert gas ambient to form a non-porous insulating film. Next, dry etching is performed using a resist pattern as a mask to form a trench in the non-porous insulating film, ashing is performed to remove the resist pattern, and the surface of the semiconductor substrate is cleaned. Thereafter, a second heat treatment is performed for the non-porous insulating film to form a porous insulating film. Since the second heat treatment is performed in an oxidizing-gas atmosphere, the pore-generating material can be removed at a temperature lower than the temperature of conventional methods to form an insulating film having a low dielectric constant.

Method for manufacturing semiconductor device

An insulating-film composition containing an insulating-film precursor and a pore-generating material is applied onto a surface of a semiconductor substrate, and a first heat treatment is performed to polymerize the insulating-film precursor without vaporizing the pore-generating material, to form a non-porous insulating film. Next, a resist pattern is formed on the non-porous insulating film, and dry etching is performed, using the resist pattern as a mask, to form a trench in the non-porous insulating film. After removing the resist pattern by ashing, the surface of the semiconductor substrate is cleaned. Next, a second heat treatment is performed to remove the pore-generating material from the non-porous insulating film and to form a porous insulating film. Thereafter, a copper layer is deposited in the trench on a barrier-metal film to form copper wiring.

There is disclosed a semiconductor device in which trenches are formed at predetermined intervals on a silicon substrate. In each trench, a first silicon oxide film is formed with the upper region of the first silicon oxide film protruding from a main substrate surface. A second silicon oxide film is formed from a boundary of the upper region in the first silicon oxide film and substrate over to the substrate surface. The height of the second silicon oxide film from the substrate surface is smaller than that of the upper region from the substrate surface. An active region is defined/formed on the substrate surface by an isolating film formed of the first and second silicon oxide films. A gate oxide film is formed on an active region surface, and a gate electrode is formed on the gate oxide film and extended from the active region over to the upper part of the isolating film.

Semiconductor device and semiconductor device manufacture method

A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.

Process for producing semiconductor devices including an insulating layer with an impurity

A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

Semiconductor devices and an insulating layer with an impurity

A semiconductor producing method includes the steps of: forming an SOG pre-film on a semimanufactured semiconductor device by means of spin-on-glass (SOG) process; and forming a modified SOG film by doping the SOG pre-film with at least one impurity ion selected from: inert gas ions; simple ions of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements; and ions of compounds containing any one of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements.

Process for producing semiconductor devices

An enclosure is formed on a substrate of a semiconductor device surrounding a bonding pad, such that a groove is formed between the enclosure and the bonding pad. An insulating film is formed over the substrate, including the enclosure and the groove. The groove and the film prevent moisture and contaminants from seeping into the semiconductor device.

Growing community of inventors

Tsukuba, Japan

Kaori Misawa