Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Nuflare Technology, Inc.

Kaori Deura

Takahiro Terada

Masayuki Tanaka

Yoshihiro Ogawa

Kunihiko Suzuki

Hiroshi Ohno

Katsuhiro Sato

Hideaki Hirabayashi

Takayuki Masunaga

Shinya Higashi

Yoshinori Kitamura

Shanying Pan

Masayoshi Yajima

Masaaki Hirakawa

Aya Watase

Yuji Hashimoto

Kosuke Adachi

Yukako Murakami

Toshihiko Kida

Takuya Matsuda

Misuzu Sakai

Makoto Ootaki

According to one embodiment, a material feeder includes a feeding unit. The feeding unit includes a container that is containable of a powdery material and a first wall that is provided with a plurality of first openings communicated with the container and at least partially covers a region to which the material is fed, the feeding unit feeding the material in the container from the first openings to the region to form a layer of the material.

Material feeder of additive manufacturing apparatus, additive manufacturing apparatus, and additive manufacturing method

According to an embodiment, a bush includes a first member, a second member, and a third member. The first member is provided with a first hole having a first axis, and has a first outer surface having a second axis different from the first axis. The second member is provided with a second hole in which the first member is housed, and has a second inner surface that is in contact with the first outer surface and a second outer surface having a third axis different from the second axis. The third member is provided with a third hole in which the second member is housed and has a third inner surface that is in contact with the second outer surface.

Bush, rotary machine, and air conditioning apparatus

According to one embodiment, a gas supply pipe has a first gas pipe configured to blow a gas which has flowed from an inflow opening via first gas blow holes arranged along a longitudinal direction, and a second gas pipe provided in parallel with the first gas pipe. The second gas pipe has second gas blow holes arranged along the longitudinal direction, and allows the gas to flow in a direction opposite to the first gas pipe.

Gas supply pipe, and gas treatment equipment

According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

Film forming apparatus and film forming method

A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Substrate treatment apparatus, substrate treatment method, and etchant

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Yokohama, Japan

Kaori Deura