Micro Mobio Corporation

Kanya Kubota

Ikuroh Ichitsubo

Masaya Kuwano

Guan-Wu Wang

Koshiro Matsumoto

Zlatko Aurelio Filipovic

Wen Chung Liu

Shigeru Watanabe

Weiping Wang

Adam James Wang

Brian Michael Wang

Shinsuke Inui

Koshirosumo Matsumoto

The wireless RF semiconductor system is described for use in wireless communication devices that operate in frequency range from 6 GHz to 100 GHz. The system comprises of at least one RF antenna and at least one active RF component fabricated (or built) on the same semiconductor substrate inside a one single packaged module. The wireless RF semiconductor system is described in a variety of different configurations with its functionality divided up over several single chip circuits. The system simplifies assembly, reduces size and cost, and allows for a quick time to market, while maximizing the RF performance demanded by fixed and mobile 4G, 5G and other wireless standards. The system uses a novel idea of design and packaging of active and passive RF components into a single package. This in turn allows RF designers to unlock the potential of very high frequencies operation that were previously thought too expensive and/or unattainable to average user. The wireless RF semiconductor system can be implemented in both mobile solutions (such as phones, tablets, and the like) and fixed applications (such as repeaters, base-stations, and distributed antenna system).

Radio frequency active antenna system in a package

The wireless RF semiconductor system is described for use in wireless communication devices that operate in frequency range from approximately 6 GigaHertz (GHz) to 100 GHz. The system comprises of at least one RF antenna and at least one RF integrated circuit fabricated (or built) on the same semiconductor substrate inside a one single packaged module. The wireless RF semiconductor system is described in a variety of different configurations with its functionality divided up over several single chip circuits. The system simplifies assembly, reduces size and cost, and allows for a quick time to market, while maximizing the RF performance demanded by fixed and mobile 4G, 5G and other wireless standards. The system uses a novel idea of configuration and packaging of active and passive RF components into a single module. This in turn allows RF manufacturers to unlock the potential of very high frequencies operation that were previously thought too expensive and unattainable to average user. The wireless RF semiconductor system can be implemented in both mobile solutions (such as phones and tablets) and fixed applications (such as repeaters, base-stations, and distributed antenna systems).

A multimode multiband wireless device includes a broadband RF power amplifier that receives RF signals and produces amplified RF signals in a cellular band in a broadband, and a coexist filter coupled to the input of the broadband RF power amplifier. The coexist filter can reject RF noise in a predetermined frequency range in the broadband adjacent to the cellular band.

Multimode multiband wireless device with broadband power amplifier

The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. A power amplifier module has a forward power (FP) sensor and a reflective power (RP) sensor. A Voltage Standing Wave Ratio (VSWR) Processing Control Circuit (VPCC) is configured to tune the matching antenna for optimal radio frequency operation and protect the power amplifier in conjunction with the power amplifier protection controller. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components. The module may also include a thermal protection system capable of effecting operation of the broadband power amplifier.

World band radio frequency front end module, system and method of power sensing thereof

A radio frequency (RF) amplifier circuit includes a first impedance matching circuit configured to receive an input RF signal, a control circuit configured to produce a band control signal according to the frequency of the input RF signal, an RF amplifier having its input connected to the first impedance matching circuit. The RF amplifier can produce an amplified RF signal in response to the input RF signal. A second impedance matching circuit can receive the amplified RF signal from the RF amplifier. At least one of the first impedance matching circuit and the second impedance matching circuit has an impedance that is adjustable by the band control signal. A multi-band filter can switch the amplified RF signal from the second impedance matching circuit to one of selectable narrow-band filters in response to the band control signal.

Linear RF power amplifier with frequency-selectable impedance matching

A substantially rectangular shaped power amplifier module includes a power amplifier for amplifying radio frequency signals, a bias control terminal and a power sensing terminal disposed on the same side of the power amplifier module, an input terminal and a ground terminal disposed on the same side of the power amplifier module, and an output terminal and one or more power supply terminals disposed on the same side of the power amplifier module.

System-in-package wireless communication device comprising prepackaged power amplifier

A radio frequency (RF) module provides first and second power amplifiers configured to produce first and second amplified RF signals at first and second output RF terminals, respectively; and first and second arrays of pads positioned opposite each other, the first array including the first output RF terminal and the second array including the second output RF terminal. The module also provides two reserve terminals that can be connected to capacitors, inductors, sensors for RF linearity, or can be left unconnected.

Miniature dual band power amplifier with reserved pins

A system of compatible modules includes a radio frequency (RF) module with a power amplifier configured to produce an amplified RF signal at an output RF terminal; and a first row of pads and a first column of pads intersecting at a corner pad of the module, and wherein the corner pad is coupled to the output RF terminal.

Systems of miniaturized compatible radio frequency wireless devices

Systems and methods are disclosed for a wireless communications device for receiving wireless electronic signals including first wireless electronic signals at a first frequency and second wireless electronic signals at a second frequency. The wireless communications device includes an antenna adapted to convert the wireless electronic signals into input electronic signals, and an amplifier coupled to the antenna, said amplifier being capable of amplifying the input electronic signals to produce amplified electronic signals and a diplexer adapted to receive the amplified electronic signals and selectively output one of the first electronic signals at the first frequency and the second electronic signals at the second frequency.

Diplexer circuit for wireless communication devices

Systems and methods are disclosed for a frequency filtering circuit for wireless communications that includes a first resonator circuit comprising a first transmission line and a first capacitor coupled to the first transmission line and a second resonator circuit in parallel to the first resonator circuit, said second resonator circuit comprising a second transmission line and a second capacitor coupled to the second transmission line. A coupling circuit couples the first resonator circuit and the second resonator circuit.

Frequency filtering circuit for wireless communication devices

A multi-band power amplifier module includes a first power amplifier that amplifies a first input radio frequency signal in a first frequency band in response to a first bias control signal. A second power amplifier amplifies a second input radio frequency signal in a second frequency band in response to a second bias control signal. A first bias control circuit produces the first bias control signal and a second bias control circuit produces the second bias control signal in response to step gain signals received at a step gain terminal. The module has first and second rows of pins oppositely positioned on the module and coupled to the first and second power amplifiers and first and second bias circuits.

Multi-band power amplifier module for wireless communication devices

A multi-band power amplifier module includes a first power amplifier that amplifies a first input radio frequency signal in a first frequency band in response to a first bias control signal. A second power amplifier amplifies a second input radio frequency signal in a second frequency band in response to a second bias control signal. A first bias control circuit produces the first bias control signal and a second bias control circuit produces the second bias control signal in response to step gain signals received at a step gain terminal.

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Shiga-ken, Japan

Kanya Kubota