Tokyo Electron Limited

Kanto Nakamura

Atsushi Gomi

Shinji Furukawa

Tetsuya Miyashita

Toru Kitada

Yasunobu Suzuki

Kazunaga Ono

Atsushi Takeuchi

Naoki Watanabe

Yasuhiko Kojima

Hiroki Maehara

Hiroshi Sone

Yusuke Suzuki

Tatsuo Hirasawa

Koichi Takatsuki

Hiroyuki Yokohara

Chiaki Yasumuro

Atsushi Shimada

Yusuke Kikuchi

Tooru Kitada

Yuki Motomura

Keisuke Sato

There is provided a film forming position misalignment correction method comprising: replacing a shielding member; loading a substrate into a film forming module by a transfer mechanism and forming a film on the substrate; detecting an amount of film forming position misalignment by transferring the substrate on which the film has been formed to a film thickness measuring device; correcting a transfer position of the substrate for the transfer mechanism; and checking the correction by transferring the substrate used for measuring the amount of film forming position misalignment to the film forming module by the transfer mechanism for which the transfer position has been corrected to form a film and determining the amount of film forming position misalignment by measuring a film thickness of the formed film by the film thickness measuring device in the same manner.

Film forming position misalignment correction method and film forming system

A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.

Vacuum processing apparatus

There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.

Film thickness measurement method, film thickness measurement device, and film formation system

A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.

Magnetron sputtering apparatus and magnetron sputtering method

A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.

Film forming apparatus and film forming method

A method for manufacturing a magnetoresistive element, includes: a first step of preparing a wafer including a first ferromagnetic layer and a first oxide layer provided directly on the first ferromagnetic layer; a second step of forming, after the first step, a second ferromagnetic layer directly on the first oxide layer; a third step of forming, after the second step, an absorbing layer directly on the second ferromagnetic layer; and a fourth step of crystallizing, after the third step, the second ferromagnetic layer by heat treatment. The second ferromagnetic layer contains boron, and the absorbing layer contains a material for absorbing boron from the second ferromagnetic layer by the heat treatment in the fourth step.

Method for manufacturing magnetoresistive element

A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Deposition device and deposition method

The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.

Vacuum-processing apparatus, vacuum-processing method, and storage medium

A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.

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Yamanashi, Japan

Kanto Nakamura