Anvik Corporation

University of Illinois

Other

Sandia Corporation

Reveo, Inc.

Kanti Jain

Nestor O Farmiga

Carl C Kling

Marc I Zemel

Thomas J Dunn

Marc A Klosner

Sivarama K Kuchibhotla

Sadeg Mustafa Faris

Jeffrey M Hoffman

Junghun Chae

William C Sweatt

Robert S Sposili

Linus Jang

Uttam Reddy

Carl Weisbecker

Kevin Lin

Gary C Bjorklund

Leszek Wojcik

Shyam Raghunandan

Hyunjong Jin

Sreeram Appasamy

Yoon Soo Han

Nestor O Framiga

Subhash Chandra

Diwakar Kedlaya

Teik-Meng Lee

Arun Paneerselvam

Energy-efficient windows incorporating spectrally selective optical elements capable of providing desirable optical characteristics (transmission, reflection, refraction or diffraction) for different wavelengths are disclosed herein. More specifically, energy-efficient windows incorporating suitably designed diffraction gratings to optimize the efficiency of the utilization of different spectral components of the solar radiation are disclosed.

Energy-efficient smart window system

Methods and systems for generating pulses of laser radiation at higher repetition rates than those of available excimer lasers are disclosed that use multiple electronic triggers for multiple laser units and arrange the timings of the different triggers with successive delays, each delay being a fraction of the interval between two successive pulses of a single laser unit. Methods and systems for exposing nanoscale patterns using such high-repetition-rate lasers are disclosed.

Pulsed laser source with high repetition rate

This invention provides processing steps, methods and materials strategies for making patterns of structures for integrated electronic devices and systems. Processing methods of the present invention are capable of making micro- and nano-scale structures, such as Dual Damascene profiles, recessed features and interconnect structures, having non-uniform cross-sectional geometries useful for establishing electrical contact between device components of an electronic device. The present invention provides device fabrication methods and processing strategies using sub pixel-voting lithographic patterning of a single layer of photoresist useful for fabricating and integrating multilevel interconnect structures for high performance electronic or opto-electronic devices, particularly useful for Very Large Scale Integrated (VLSI) and Ultra large Scale Integrated (ULSI) devices. Processing methods of the present invention are complementary to conventional microfabrication and nanofabrication methods for making integrated electronics, and can be effectively integrated into existing photolithographic, etching, and thin film deposition patterning systems, processes and infrastructure.

Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same

Micromirrors and micromirror arrays described herein are useful, for example in maskless photolithography systems and methods and projection display devices and methods. According to one aspect, the micromirrors comprise a polymer structural layer and a reflective dielectric multilayer for selective reflection and/or redirection of incoming electromagnetic radiation. According to another aspect, incorporation of a reflective dielectric multilayer allows for use of polymer structural materials in micromirrors and prevents damage to such polymer materials due to excessive heating from absorption of electromagnetic radiation, as the reflective dielectric multilayers are highly reflective and minimize heating of the micromirror components. According to yet a further aspect, top down fabrication methods are described herein for making a micromirror comprising a polymer structural layer and a reflective dielectric multilayer.

Mirror arrays for maskless photolithography and image display

This invention provides photoablation&#x2014;based processing techniques and materials strategies for making, assembling and integrating patterns of materials for the fabrication of electronic, optical and opto-electronic devices. Processing techniques of the present invention enable high resolution and/or large area patterning and integration of porous and/or nano- or micro-structured materials comprising active or passive components of a range of electronic devices, including integrated circuits (IC), microelectronic and macroelectronic systems, microfluidic devices, biomedical devices, sensing devices and device arrays, and nano- and microelectromechanical systems.

Material assisted laser ablation

A high-throughput, low cost, patterning platform is provided that is an alternative to conventional photolithography and direct laser ablation patterning techniques. The processing methods are useful for making patterns of microsized and/or nanosized structures having accurately selected physical dimensions and spatial orientation that comprise active and passive components of a range of microelectronic devices. Processing provided by the methods is compatible with large area substrates, such as device substrates for semiconductor integrated circuits, displays, and microelectronic device arrays and systems, and is useful for fabrication applications requiring patterning of layered materials, such as patterning thin film layers in thin film electronic devices.

High throughput, low cost dual-mode patterning method for large area substrates

Described herein are processing techniques for fabrication of stretchable and/or flexible electronic devices using laser ablation patterning methods. The laser ablation patterning methods utilized herein allow for efficient manufacture of large area (e.g., up to 1 mmor greater or 1 mor greater) stretchable and/or flexible electronic devices, for example manufacturing methods permitting a reduced number of steps. The techniques described herein further provide for improved heterogeneous integration of components within an electronic device, for example components having improved alignment and/or relative positioning within an electronic device. Also described herein are flexible and/or stretchable electronic devices, such as interconnects, sensors and actuators.

Patterning methods for stretchable structures

This invention provides processing steps, methods and materials strategies for making patterns of structures for electronic, optical and optoelectronic devices. Processing methods of the present invention are capable of making micro- and nano-scale electronic structures, such as T-gates, gamma gates, and shifted T-gates, having a selected non-uniform cross-sectional geometry. The present invention provides lithographic processing strategies for sub-pixel patterning in a single layer of photoresist useful for making and integrating device components comprising dielectric, conducting, metal or semiconductor structures having non-uniform cross-sectional geometries. Processing methods of the present invention are complementary to conventional microfabrication and nanofabrication platforms, and can be effectively integrated into existing photolithographic, etching and thin film deposition patterning strategies, systems and infrastructure.

Methods for fabricating complex micro and nanoscale structures and electronic devices and components made by the same

In an aspect, described herein is a dynamically controllable optoelectronic smart window which utilizes a diffraction grating for selective transmission or rejection of a specific region of the electromagnetic spectrum, for example the infrared, near-infrared and/or visible regions. Window embodiments described herein may further utilize a selectively controlled and/or patterned total internal reflection layer to assist with the selective rejection of a specific spectral region while allowing for transmission of another specific spectral region. In another aspect, the present invention provides methods for dynamically controlling the transmission or rejection of solar near-infrared and/or visible radiation.

Energy-efficient optoelectronic smart window

A turbulence-controlled vacuum debris removal subsystem safely exhausts particles ejected during photoablation. Nested interconnected chambers provide diminishing sweeping gas partial pressure and diminishing turbulence, ejecting particles from the ablation beam path between pulses, without compromising continuing particle conductance. Removal rate (debris generation rate) depends on conductance and particle sizes. The chambers interconnect through metering holes which enable optimization of partial pressure differentials. Controlled flow accomplishes debris removal, reducing turbulence of the mixture of debris and sweeping gases. A preferred embodiment uses a nest of concentric chambers, providing a clear light path. Another preferred embodiment uses orifices on chamber faces for removal and forming an envelope of gas around the processing region for dynamically containing the ejected particulate matter from the ablation site to the exhaust.

Vacuum debris removal system

A zero power identical pair of oppositely-oriented meniscus lens elements mounted in the projection light path, serves as curved mask support while compensating for optical anomalies such as beam shift and beam deviations produced by other transparent supports for the curved mask. The zero-power meniscus lens pair, without affecting the transmission beam characteristics, lets the beam diffract as efficiently as does a regular planar mask, thus preserving the partial coherence effects and resolution concepts of projection lithography. This simple but novel optics device is not only expected to clear several barriers for curved mask projection lithography but also find place in other applications where collimated or converging light beams have to travel extra paths without significant aberration.

Illumination compensator for curved surface lithography

An enhanced spatial light modulator (ESLM) array, a microelectronics patterning system and a projection display system using such an ESLM for heat-minimization and resolution enhancement during imaging, and the method for fabricating such an ESLM array. The ESLM array includes, in each individual pixel element, a small pixel mirror (reflective region) and a much larger pixel surround. Each pixel surround includes diffraction-grating regions and resolution-enhancement regions. During imaging, a selected pixel mirror reflects a selected-pixel beamlet into the capture angle of a projection lens, while the diffraction grating of the pixel surround redirects heat-producing unused radiation away from the projection lens. The resolution-enhancement regions of selected pixels provide phase shifts that increase effective modulation-transfer function in imaging. All of the non-selected pixel surrounds redirect all radiation energy away from the projection lens. All elements of the ESLM are fabricated by deposition, patterning, etching and other microelectronic process technologies.

Spatial light modulator features

A compact, high-brightness, integrated illuminator in which collection of light from a point-arc source is maximized by a multi-curvature reflector section configuration of elliptical reflector and segmented spherical retroreflector directing all light rays into a well-defined numerical aperture. The invention also integrates a homogenizer and other optical elements with the multi-curvature reflector section, constructs any or all of these components in a single block of optical material, or, alternatively, constructs these components with molded hollow reflective cavities fabricated in metal or plastic blocks. Cooling is provided by internal fluid channels within the block.

High-brightness, compact illuminator with integrated optical elements

A compact light-beam homogenizer is realized by multiple reflections within internally-reflecting optical channels which are arranged in a folded configuration. The optical channels may be hollow with mirrored walls, or made of a solid transparent optical material. Light enters through an apertured mirror whose internally reflective surface sends back-reflected rays forward for recycling. Multiple entry ports may be provided for combining several beams or for reducing the intensity in the channels. The homogenizer may be used in reverse as a beam divider. Different shapes of the optical channels are provided for obtaining an effective emission surface of different shapes. Due to reflections from surfaces that are parallel to the optical axis, the numerical aperture of the input beams is preserved.

Growing community of inventors

Hawthorne, NY, United States of America

Kanti Jain