Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Kanta Abe

Satoshi Seo

Hiromi Seo

Kyoko Takeda

Takao Hamada

Kunihiko Suzuki

Yuji Iwaki

Tsunenori Suzuki

Tatsuyoshi Takahashi

Naoaki Hashimoto

Satoko Shitagaki

Hiroki Suzuki

Shunpei Yamazaki

Hidekazu Miyairi

Tetsuhiro Tanaka

Yoshitaka Yamamoto

Takashi Ienaga

A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

Light-emitting device, light-emitting apparatus, electronic device, and lighting device

A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Arand Areach independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Arrepresents a substituent including a carbazole skeleton.

Light-emitting element, light-emitting device, electronic device, and lighting device

Provided is a positive electrode for a secondary battery, which has a small change in a crystal structure due to charging and discharging and has excellent cycle performance. The positive electrode for a secondary battery includes n positive electrode active material layers (n is an integer greater than or equal to 2), n−1 separation layer(s), and a positive electrode current collector layer. The positive electrode active material layers and the separation layer(s) are alternately stacked. The positive electrode active material layer contains lithium, cobalt, and oxygen. The separation layer contains a titanium compound. Titanium oxide and titanium nitride are preferable as the titanium compound, and titanium oxide is particularly preferable.

Positive electrode for secondary battery, secondary battery, and electronic device

A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (GO). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (GO), Arand Areach independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Arrepresents a substituent including a carbazole skeleton.

A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with along lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to &#x2212;5.7 eV and lower than or equal to &#x2212;5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

A light-emitting element with a lower voltage and higher emission efficiency is provided. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than the LUMO level of the second organic compound, and a difference between them is larger than 0 eV and smaller than or equal to 0.5 eV. Furthermore, the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.

Light-emitting element, display device, electronic device, and lighting device

A novel organic compound having a high hole-transport property is provided. A long-lifetime light-emitting element is provided. An organic compound represented by General Formula (G0) is provided. In General Formula (G0), Arrepresents a substituted or unsubstituted naphthyl group, Arrepresents a substituted or unsubstituted carbazolyl group, Arrepresents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirofluorenyl group, and &#x3b1;and &#x3b1;each independently represent a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenyldiyl group.

Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device

Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b&#x2267;2, and Formula (2), b&#x3e;0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

Growing community of inventors

Kanagawa, Japan

Kanta Abe