Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Kansho Yamamoto

Takuo Hada

Shinsuke Ikeuchi

Hideya Horiuchi

Yoichi Mochida

Takao Mouri

Michio Kadota

Katsumi Fujimoto

Taro Nishino

Takashi Ogami

Teiji Yamamoto

Shunsuke Kitamura

Ivo P Koutsaroff

Junya Komoda

A piezoelectric transformer that includes a vibration portion assembly having an output electrode, an output-side intermediate electrode, an input-side intermediate electrode, and an input electrode. The vibration portion assembly includes n vibration portions. The input electrode includes one to n input electrode pieces. The output electrode includes one to n output electrode pieces. Wiring lines are arranged such that voltages of opposite phases can be respectively applied to a first input electrode piece group of the input electrode pieces corresponding to odd-numbered vibration portions, and a second input electrode piece group of the input electrode pieces corresponding to even-numbered vibration portions. The second output electrode piece and the first output-side intermediate electrode piece are superposed with each other in the thickness direction. The first output electrode piece is not superposed with either of the first and second output-side intermediate electrode pieces in the thickness direction.

Piezoelectric transformer

A piezoelectric transformer that includes a base and an upper layer supported by the base. The upper layer includes a first piezoelectric layer that includes the portion of the upper layer that is interposed between an output electrode and an intermediate electrode, and a second piezoelectric layer that is superposed with the first piezoelectric layer and includes the portion of the upper layer interposed between the intermediate electrode and an input electrode in at least n vibration portions. Moreover, the input electrode includes multiple input electrode pieces and the output electrode includes multiple output electrode pieces. In addition, wiring lines are routed such that voltages of opposite phases can be respectively applied to a first input electrode piece group and a second input electrode piece group with the potential of the intermediate electrode serving as a reference.

A piezoelectric device that includes a base member having an opening therein and an upper layer supported by the base member. The upper layer includes a vibration portion at a location corresponding to the opening in the base member. The vibration portion includes a lower electrode, an intermediate electrode and an upper electrode that are spaced apart from one another in a thickness direction of the piezoelectric device. The upper layer includes a first piezoelectric layer disposed so as to be at least partially sandwiched between the lower electrode and the intermediate electrode, and a second piezoelectric layer disposed so as to overlap with the first piezoelectric layer and so as to be at least partially sandwiched between the intermediate electrode and the upper electrode. The first piezoelectric layer and the second piezoelectric layer are different in relative permittivity in the thickness direction of the piezoelectric device.

Piezoelectric device, piezoelectric transformer, and method of manufacturing piezoelectric device

A method for manufacturing a piezoelectric device that includes a substrate and a vibration portion that can include a membrane or a beam that is directly or indirectly supported by the substrate and arranged above the substrate. Moreover, the vibration portion includes a piezoelectric layer and the method includes forming the vibration portion and adjusting a resonance frequency of the vibration portion by locally subjecting a region including the vibration portion to heat treatment.

Method for manufacturing a piezoelectric device

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

A piezoelectric device that includes a substrate defining an opening therein; a piezoelectric layer arranged above the substrate such that at least part of the piezoelectric layer extends over the opening and forms a membrane part that is not superimposed with the substrate; a lower electrode arranged below the piezoelectric layer in at least the membrane part; and an upper electrode that is arranged above the piezoelectric layer so as to face at least part of the lower electrode with the piezoelectric layer interposed therebetween in the membrane part. A heater is arranged above the piezoelectric layer so as to be separate from the upper electrode or at least part of the upper electrode doubles as a heater.

Piezoelectric device

An electroacoustic transducer includes an ultrasonic element that includes a diaphragm and a support frame, a case body that accommodates the ultrasonic element, and fixing portions that join the support frame portion to a bottom plate portion of the case body. First and second main surfaces of the diaphragm face top and bottom plate portions of the case body, respectively, and a sound hole is provided in the case body. The fixing portions are partially provided along the circumferential direction of the support frame such that a space between the second main surface and the bottom plate portion communicates with a space around the ultrasonic element, and an acoustic path connecting the first main surface and the second main surface and the sound hole is provided in the case body. The fixing portions are defined by a die bonding agent including spherical spacers.

Electroacoustic transducer

A thermal infrared sensor for gas measurement including a sensing element. The sensing element includes a thermal detection layer that outputs an electric signal based on a temperature change, a light-receiving surface electrode disposed on a light-receiving surface of the thermal detection layer, and a back electrode disposed on the thermal detection layer opposite the light-receiving surface electrode. The light-receiving surface electrode has a periodic structure configured to selectively absorb infrared light having an absorption wavelength of a sample gas.

Thermal infrared sensor and gas measuring apparatus

A thermal-type flow-rate sensor includes a substrate and a detection unit that is supported by the substrate and at least an upper surface of which is exposed to a flow of a fluid. The detection unit includes: an insulating layer, a heating element arranged on an upper surface of the insulating layer, an upstream temperature measurement element that is arranged on the upper surface of the insulating layer upstream of the heating element in the flow direction that includes a pyroelectric layer, and a downstream temperature measurement element arranged on the upper surface of the insulating layer so as to be positioned downstream of the heating element in the flow direction and that includes a pyroelectric layer.

Thermal-type flow-rate sensor

A piezoelectric actuator that includes a fixed electrode in a base substrate, a dielectric layer on the surface of the base substrate, a lower electrode that is at least partially separated from the base substrate, a piezoelectric layer on the surface of the lower electrode, and an upper electrode on the side of the surface of the piezoelectric layer. At least a portion of the upper electrode or the lower electrode serves as a movable electrode, which can be moved by distortion of the piezoelectric layer caused by application of a piezoelectric drive voltage.

Piezoelectric actuator having a moveable electrode portion

Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element

A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaOor LiNbO, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.

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Nagaokakyo, Japan

Kansho Yamamoto