International Superconductivity Technology Center

Kyushu Electric Power Co., Inc.

Fujikura Limited

Hitachi Cable, Inc.

The Kansai Electric Power Co., Inc.

Hokkaido Electric Power Company, Inc.

Sumitomo Electric Industries, Limited

Asahi Glass Company, Limited

Sumitomo Metal Industries, Inc.

Ishikawajima-harima Jukogyo Kabushiki Kaisha

Railway Technical Research Institute

Kanshi Ohtsu

Shoji Tanaka

Yasuji Yamada

Yuh Shiohara

Minoru Tagami

Yasuo Kanamori

Atsushi Kume

Noriyuki Tatsumi

Jiro Tsujino

Masaru Nakamura

Yuichi Nakamura

Youichi Enomoto

Teruo Izumi

Masaya Konishi

Kunihiko Hayashi

Kengo Ishige

A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Composite metal oxide material

Method of producing composite metal oxide material

The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.

Method of producing an oxide superconductor single crystal film

A method of pulling a crystal of a metal oxide is disclosed, in which the growth of the crystal is performed in a liquid phase having a composition which is different from the metal oxide and which contains components constituting the metal oxide. The liquid phase is in contact with a solid phase located at a position separated from the position at which the crystal of the metal oxide grows. The solid phase has a composition different from that of the metal oxide and supplies components constituting the metal oxide to the liquid phase.

Method of preparing metal oxide crystal

Growing community of inventors

Tokyo, Japan

Kanshi Ohtsu