Alliance for Sustainable Energy, LLC

Stion Corporation

Kannan Ramanathan

Robert D Wieting

Lorelle Mansfield

Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 &#x212b;/s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.

Methods of forming CIGS films

A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

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San Jose, CA, United States of America

Kannan Ramanathan