Kabushiki Kaisha Toshiba

Kankichi Ito

Hideki Okumura

A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type that is between the first electrode and the second electrode. A second semiconductor region is adjacent to the first semiconductor region along a first direction and includes a second conductivity type material. A first insulating region is provided within the second semiconductor region. A third electrode is provided on the first semiconductor region via a second insulating region.

Growing community of inventors

Hanamaki Iwate, Japan

Kankichi Ito