Tokyo Electron Limited

Nagaoka University of Technology

Kanji Yasui

Yasunobu Inoue

Hiroshi Nishiyama

Mitsuru Ushijima

Katsuhiko Iwabuchi

Masatoshi Tsukichi

Masasuke Takata

A fabrication method for fabricating a metal oxide film introduces Hgas and Ogas or, HOgas, into a catalytic reactor to make contact with a catalyst to generate HO gas. The HO gas that is generated is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit the metal oxide thin film on a substrate and fabricate the metal oxide thin film.

Fabrication method and fabrication apparatus for fabricating metal oxide thin film

A substrate processing method includes steps of: arranging a substrate in a chamber; introducing Hgas at a first flow rate and Ogas at a second flow rate independently from the Hgas into a catalyst reaction portion in which catalyst is accommodated, wherein HO gas produced from the Hgas and the Ogas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the Ogas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the Hgas and the Ogas and reducing the flow rate of the Ogas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Substrate processing method

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Nagaoka, Japan

Kanji Yasui