Mitsubishi Denki Kabushiki Kaisha

Kanji Tabaru

Junko Matsumoto

Tetsuhiro Fukao

Shigenori Sakamori

Nobuaki Yamanaka

Kazuyuki Ohmi

Yoshihiro Kusumi

Akemi Teratani

There is described formation of a contact hole without involvement of damage to an etching stopper film and deterioration of electric characteristics, achieved by means of a self-alignment method. An interlayer oxide film is etched through an opening of a resist mask, and by means of plasma etching through use of a processing gas comprising a mixture of a rare gas and a CF-based gas, thereby tapering a shoulder of the silicon nitride film. Alternatively, a silicon oxide film and a silicon nitride film are continually etched through an opening of the resist mask, by means of plasma etching through use of a CH F gas added to a mixed gas including a rare gas and a C F gas.

Semiconductor device having an improved contact structure and a manufacturing method thereof

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Tokyo, Japan

Kanji Tabaru