Skhynix Inc.

Samsung Electronics Co., Ltd.

Kangsik Choi

Minwook Na

Jongwoo Shin

Jeeyeun Wang

Minsoo Kwon

A memory device includes a substrate, an active layer that is spaced apart from the substrate and laterally oriented, a word line that is laterally oriented in parallel to the active layer along one side of the active layer, an active body that is vertically oriented by penetrating through the active layer, a bit line that is vertically oriented by penetrating through the active layer to be spaced apart from one side of the active body, and a capacitor that is vertically oriented by penetrating through the active layer to be spaced apart from another side of the active body.

Memory device and method for fabricating the same

A mobile terminal and screen operation method for the same are disclosed. The screen operation method includes: displaying a screen containing an amorphous object that is changeable at least in part to a specific form according to an input event; receiving a generated input event; and displaying a concrete object that is generated from the amorphous object by modifying the amorphous object at least in part according to the input event.

Growing community of inventors

Gyeonggi-do, South Korea

Kangsik Choi