Samsung Electronics Co., Ltd.

Kangmin Jeon

Dougyong Sung

Minkyu Sung

Sang-Ho Lee

Sung-Ki Lee

Tae-Hwa Kim

Jung Min Kim

Jaehyun Lee

Tae-Hyun Kim

Jungmin Ko

Dongsoo Lee

Jongwoo Sun

Hyung Joo Lee

Sungho Jang

Sang Ki Nam

Kyung-Sun Kim

Heungsik Park

Kuihyun Yoon

Jewoo Han

Nam Kyun Kim

Kyounghoon Han

Kwonsang Seo

Seongha Jeong

Chanhoon Park

Ungyo Jung

Seunghan Baek

Kimoon Jung

Jungmo Yang

Seungbin Ahn

Changheon Lee

A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

Plasma confinement ring, semiconductor manufacturing apparatus including the same, and method of manufacturing a semiconductor device using the same

A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

Gas injection module, substrate processing apparatus, and method of fabricating semiconductor device using the same

A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.

Gas supply assembly and substrate processing apparatus including the same

A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.

Method of fabricating semiconductor device

Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Substrate manufacturing method and substrate manufacturing apparatus

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Hwaseong-si, South Korea

Kangmin Jeon