Samsung Electronics Co., Ltd.

Kangho Roh

Chanik Park

Hojun Shim

Wonmoon Cheon

Wonhee Cho

Jong Tae Park

Yang-sup Lee

Je-Hyuck Song

Youngjoon Choi

Seontaek Kim

Moonwook Oh

Jaesoo Lee

Seung-Duk Cho

Jaehoon Heo

Heewon Lee

Hyunkyo Oh

Chanha Kim

Sanghyun Choi

Youngdeok Seo

Yunjung Lee

Jinbaek Song

Yang Seok Ki

Jongwon Lee

Jinyoung Kim

Sehwan Park

Jooyoung Hwang

Ilhan Park

Jeonguk Kang

Woohyun Kang

Seungkyung Ro

Jungmin Seo

Jinwoo Hong

Wooseok Chang

Byeonghui Kim

Seungjun Yang

Yeonji Kim

Hyeongyu Min

Heetai Oh

Hea-Young Roh

Silwan Chang

Disclosed is an operation method of a storage device supporting a multi-stream, which includes receiving an input/output request from an external host, generating a plurality of stream identifier candidates by performing machine learning on the input/output request based on a plurality of machine learning models that are based on different machine learning algorithms, generating a model ratio based on a characteristic of the input/output request, applying the model ratio to the plurality of stream identifier candidates to allocate a final stream identifier for the input/output request, and storing write data corresponding to the input/output request in a nonvolatile memory device of the storage device based on the final stream identifier.

Operation method of storage device configured to support multi-stream

A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method including: periodically receiving a read command for a first memory block among the plurality of memory blocks; periodically performing a read operation on the first memory block based on the read command; periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.

Method of measuring durability of nonvolatile memory device and method of performing wear-leveling in storage device using the same

A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

Memory system processing request based on inference and operating method of the same

A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

Nonvolatile memory device including a fast read page and a storage device including the same

A storage device performs a read operation by restoring an ON cell count (OCC) from a power loss protection (PLP) area of a nonvolatile memory. The nonvolatile memory includes a memory blocks, a buffer memory and a controller. The buffer memory stores a first ON cell count (OCC) indicating a number of memory cells turned ON by a first read voltage and a second ON cell count (OCC) indicating a number of memory cells turned ON by a second read voltage among the memory cells connected to a reference word line. The controller stores the OCCfor each of the memory blocks in the PLP area when a sudden power off occurs in the storage device.

Storage device performing read operation by restoring ON cell count (OCC) from power loss protection area of non-volatile memory

A method includes sampling input/output requests from a host to generate sampled input/output requests; classifying the sampled input/output requests into clusters using an unsupervised learning algorithm; determining a hot data range based on a characteristic of the clusters; and incorporating the determined hot data range into a hot data table.

Storage device using unsupervised learning scheme and memory management method thereof

An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.

Operation method of a storage controller configured to control a nonvolatile memory device

A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on cell count information when correction of an error in read data, received from the memory device performing a read operation, fails. The memory controller may control the memory device to perform a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When correction of the error in the read data fails again, the memory controller may control the memory device to perform a read operation using a corrected read voltage generated using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.

Memory controller, memory device, and storage device

A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.

Storage device and operating method thereof

Provided are a storage device and a method for controlling thereof. Some embodiments include a method, comprising: receiving target performance information by a storage device; comparing the target performance information with maximum performance information by the storage device; and adjusting an incremental step pulse program (ISPP) operation performed on a memory cell of the storage device in response to the comparing of the target performance information with maximum performance information.

Storage device and method for controlling thereof

A garbage collection method of a data storage system having storage devices is provided. The method includes determining whether a garbage collection is needed in one of the storage devices, transferring a multicast garbage collection command from one of the storage devices to at least one other storage device in a write group through a multicast operation, and performing the garbage collection in one of the storage devices.

Storage device and garbage collection method of data storage system having the storage device

A storage device may include a main storage part including one or more memories; and a controller configured to control an overall operation of the main storage part. The controller includes a filter manager configured to store data format information and a filtering condition provided from a host; one or more stream filters configured to search and project data stored in the one or more memories in parallel in response to a control of the filter manager to produce searched and projected data; and a merge filter configured to merge the searched and projected data of the one or more stream filters in response to the control of the filter manager.

Storage device and stream filtering method thereof

A data storage device and a method of managing data in the data storage device to improve data reliability are provided. In the method of managing data, one of control management information about a memory block of nonvolatile memory in which data will be written and control management information about the data are received. A redundant array of independent disks (RAID) parity page ratio is determined according to the control management information. When a data write operation mode is performed, parity data is written in a parity page of the memory block according the RAID parity page ratio. According to some embodiments of the inventive concepts, since a RAID parity page ratio is selectively determined according to control management information, reliability of data is secured or increased.

RAID data management method of improving data reliability and RAID data storage device

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Seoul, South Korea

Kangho Roh