Samsung Electronics Co., Ltd.

Kangchun Lee

Sungsik Park

Yongman Son

Boun Yoon

Ilyoung Yoon

Joongsuk Oh

Huiteak Hong

Junhwan Yim

A semiconductor device manufacturing method is capable of manufacturing a semiconductor device with improved reliability, by simplifying a chemical mechanical polishing (CMP) process and minimizing a thickness distribution of a dummy gate during the CMP process. The semiconductor device manufacturing method includes forming, on a substrate, dummy gate structures extending in a first direction and spaced apart from each other in a second direction perpendicular to the first direction, each dummy gate structure including a dummy gate and a mask pattern on an upper surface of the dummy gate; forming an interlayer insulating layer covering the dummy gate structures; and performing the single slurry CMP process of removing some of the interlayer insulating layer and the dummy gate structures through the single slurry CMP process and exposing the upper surface of the dummy gate.

Method of manufacturing semiconductor device using single slurry chemical mechanical polishing (CMP) process

Disclosed are an electronic apparatus and a method of controlling the same. The electronic apparatus includes: a display; and a processor configured to: control the display to display an image on the display, identify a screen mode of the display displaying an image among a plurality of screen modes having different aspect ratios, and provide information on content corresponding to the identified screen mode among a plurality of pieces of content.

Electronic apparatus and method of controlling the same

Growing community of inventors

Suwon-si, South Korea

Kangchun Lee