Hynix Semiconductor Inc.

Skhynix Inc.

Kang-Youl Lee

Kwang-Hyun Kim

Ja-Beom Koo

Don-Hyun Choi

A semiconductor device includes a memory region suitable for providing a plurality of read data in parallel at every read operation cycle, an output path suitable for outputting the plurality of read data at a set time in response to an internal clock and one or more internal control signals at the every read operation cycle, and an output path control unit suitable for generating the internal control signal in response to a read command and generating the internal clock in response to a system clock, wherein a shifting time of a first edge of the internal clock is adjusted by a set level at the every read operation cycle during a test mode.

Semiconductor device, semiconductor system including the same and test method thereof

A memory device includes a first bank, a second bank, a plurality of interface pads, and a data output unit configured to output compressed data of the first bank through at least one interface pad among the plurality of interface pads and subsequently output compressed data of the second bank through the one interface pad.

Memory device and compressive test method for the same

A latch circuit may include a first inverting unit configured to drive a second node in response to a level of a first node, a second inverting unit configured to drive the first node in response to a level of the second node, an initialization unit configured to drive the first node at a first level in response to activation of an initialization signal, and a power breaker configured to break a supply of power of a second level to the second inverting unit when the initialization signal is activated.

Latch circuit and flip-flop circuit including the same

A data output circuit includes a strobe signal controlling block configured to generate a first delayed strobe signal by delaying a first strobe signal by a certain delay amount, an input/output sense amplifying block configured to amplify first parallel data signals to generate second parallel data signals having the same number of bits as that of the first parallel data signals in response to the first strobe signal and the first delayed strobe signal, a storing block configured to latch the second parallel data signals in response to a second strobe signal and a second delayed strobe signal, and a parallel-to-serial converting block configured to sequentially output the second parallel data signals latched in the storing block, wherein the first strobe signal is used to generate a data signal that is outputted first among the second parallel data signals.

Data output circuit and method

A data output circuit of a semiconductor memory device includes a pipe latch unit configured to store input parallel data and align the stored data in response to a plurality of alignment control signals to output serial output data, and an alignment control signal generating unit configured to generate the plurality of alignment control signals in response to a burst-type information and a seed address group, wherein the alignment control signal generating unit generates the alignment control signals to swap data in a swap mode where the burst-type is a certain type and bits of the seed address group are certain values.

Data output circuit of semiconductor memory device

A synchronous semiconductor memory device includes a data alignment reference pulse generation unit configured to generate a data alignment reference pulse in response to a data strobe signal, a data alignment suspension signal generation unit configured to generate a data alignment suspension signal in response to the data alignment reference pulse, a data strobe termination signal, and a write pulse, and a data alignment unit configured to align input data in response to the data alignment reference pulse and stop aligning the input data in response to the data alignment suspension signal.

Synchronous semiconductor memory device

A data input circuit for a semiconductor memory apparatus includes a data latch block that, according to a data strobe signal, latches data and outputs the latched data; a data output controlling unit that determines a phase difference between the data strobe signal and a clock signal, and activates a data output control signal; and a data delay block that, when the data output control signal is activated, delays the data output from the data latch block for a predetermined time, and outputs the delayed data.

Data input circuit for a semiconductor memory capable of adapting to a phase skew between a data strobe signal and an external clock signal

A synchronous semiconductor memory device including a data alignment reference pulse generating unit configured to generate a data alignment reference pulse in response to a data strobe signal (DQS), an alignment hold signal generating unit configured to generate an alignment hold signal, which is activated during a period corresponding to a postamble of the data strobe signal, in response to the data alignment reference pulse and a data input clock, and a data alignment unit configured to align input data in response to the data alignment reference pulse and the alignment hold signal.

Synchronous semiconductor memory device and method for driving the same

A semiconductor device controls an error of the AC parameter caused by a processing variation without reproduction of the semiconductor device, thereby reducing the new design and developing time. The semiconductor device includes an antifuse unit having a plurality of programmable antifuses and producing digital coding signals by programming the antifuses in a test mode. The semiconductor device also includes a timing adjustor for adjusting an output time of an input signal by using the digital coding signals. The timing adjustor includes a plurality of capacitors for producing different delay times of the input signal, and a latch circuit for latching a delayed input signal in response to a data strobe signal.

Semiconductor device capable of adjusting operation timing using antifuse

A semiconductor memory device includes at least memory cell block which has a plurality of memory cells and outputs a plurality of data signals in response to a read command signal; a data latching unit for latching and outputting the plurality of data signals in response to a data output control signal generated in response to the read command signal; a data selection unit for selecting a data output mode from the plurality of data output modes in response to a data selection signal and for outputting data corresponding to the selected data output mode; and a data output control unit for outputting a data selection signal to the data selection unit in response to the data output control signal.

Semiconductor memory device for preventing skew and timing error of output data

An antifuse circuit serves to generate an antifuse enable signal for use in repairing a defected memory cell in a semiconductor device. The inventive antifuse includes: an antifuse unit employing an antifuse, wherein the antifuse is controlled as being shorted or insulated according to a repair program; an antifuse precharge unit for precharging the antifuse by using a predetermined voltage level in response to a power-up signal, wherein the predetermined voltage level is lower than that of an external voltage source; and an output latch unit driven by the predetermined voltage level for latching a antifuse voltage level appearing on the antifuse and generating the antifuse enable signal corresponding to the antifuse voltage level.

Growing community of inventors

Gyeonggi-do, South Korea

Kang-Youl Lee