Inspur Suzhou Intelligent Technology Co., Ltd

Suzhou Metabrain Intelligent Technology Co., Ltd.

Kang Su

Tuo Li

Fen Guo

Hongtao Man

Lang Zhou

Disclosed is a method for stripping a gallium nitride substrate, including: a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof is acquired; an interior of the gallium nitride substrate is scanned and irradiated via the epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and the gallium nitride substrate is separated at the decomposition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device.

Method for stripping gallium nitride substrate

An electronic device and a memristor-based logic gate circuit thereof. In the present application, a control end of a controllable switch is connected to a negative end of an output memristor in a MAGIC-based AND logic gate, and whether a second memristor is powered on is controlled by the controllable switch. Thus, when resistance value states of two input memristors in the AND logic gate are different, the controllable switch will conduct and power on the second memristor, and the second memristor will present a low-resistance state at this time. When the resistance value states of the two input memristors are the same, the controllable switch will not conduct and the second memristor will then remain the state unchanged, i.e., presents a high-resistance state. An exclusive OR logic gate is formed by combining the two input memristors and the second memristor.

Electronic device and memristor-based logic gate circuit thereof

The present application discloses a method, a system, a device, and a storage medium for fabricating a GaN chip. The method includes: growing a NbN sacrificial layer on an original substrate, and growing a GaN insertion layer on the NbN sacrificial layer; growing a TaN sacrificial layer on the GaN insertion layer, and growing a semiconductor layer on the TaN sacrificial layer to form a GaN wafer; bonding the GaN wafer with a first surface of a temporary carrier, and removing the NbN sacrificial layer and the TaN sacrificial layer; and transferring remaining material after removal of the NbN sacrificial layer and the TaN sacrificial layer to a target substrate, and removing the temporary carrier from the remaining material to form the GaN chip.

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Jiangsu, China

Kang Su