Semes Co., Ltd.

Kang Rae Ha

Hyung Joon Kim

Sang-Kee Lee

Wonhaeng Lee

Provided is a substrate supporting unit. The substrate supporting unit includes a susceptor supporting the substrate and having a pin hole vertically formed therein, a lift pin provided to move up and down along the pin hole, a support plate supporting the lift pin, and a driving unit vertically moving the support plate. The lift pin has a first magnetic substance formed at a lower end thereof. The support plate has a second magnetic substance provided thereon and having an opposite polarity to a polarity of the first magnetic substance.

Lift pin unit and substrate supporting unit having the same

An apparatus comprises a housing having a process space, a support unit supporting the substrate in the process space, a process gas supply unit supplying a process gas into the process space, and a plasma source generating plasma from the process gas. The support unit comprises a support member on which the substrate is placed, a heating member that heats the substrate supported on the support member, and a heat transfer gas supply member that supplies a heat transfer gas to a backside of the substrate. The heating member comprises heaters that heat regions on the substrate on the support member viewed from above. The support member comprises a protrusion that partitions a space between the support member and the backside of the substrate placed on the support member into gas regions, and at least one of heating regions is divided into regions by the protrusion viewed from above.

Substrate treating apparatus, substrate support unit, and substrate treating method

A fabrication method of a supporting unit supporting a substrate is provided. The fabrication method includes providing a supporting plate that is made of a non-conductive material and configured to support the substrate, providing a base plate that is disposed under the supporting plate and made of a material containing a conductive material, and forming a first metal film on a top surface of the base plate and bonding the supporting plate with the base plate through a brazing process.

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Cheonan-si, South Korea

Kang Rae Ha