Samsung Display Co., Ltd.

Kang-Moon Jo

An-Su Lee

Jun-Hyun Park

Chong-Chul Chai

Bo-Yong Chung

Young-Wan Seo

Young-Min Kim

Bo-Sung Kim

Tae-Young Choi

Seon-Pil Jang

Seung-Hwan Cho

Dong-Woo Kim

Yeon-Taek Jeong

Jun-Ho Song

Il-Gon Kim

Kyung-Hoon Kim

Bo Sung Kim

Ki-beom Lee

Se-Hyoung Cho

Masataka Kano

Doo-Na Kim

Ji-Hye Lee

Doo-Hyoung Lee

A display device including a substrate, a first upper power line, a conductive member, a protective insulating layer, an upper connection member, and a sub-pixel structure. The upper connection member is disposed in a first pad area and a first peripheral area on a planarization layer, and electrically connects the first upper power line and the conductive member through a first contact hole, which is formed in the protective insulating layer and the planarization layer located on the conductive member, and a second contact hole, which is formed in the protective insulating layer and the planarization layer located on the first upper power line.

Display device including conductive member electrically connected to power line

A display panel driver drives pixels based on first power having at least three voltage levels, second power having a constant voltage, and third power having two voltage levels. Each pixel includes a first transistor connected between first and second nodes and including a gate electrode to receive a scan signal, a second transistor connected between the second node and a third node in series with the first transistor and including a gate electrode to receive the third power, and a driving transistor connected between a source of the first power and the third node and including a gate electrode connected to the first electrode to control a driving current for an organic light emitting diode. A first capacitor is connected between a source of the third power and the first node, and a second capacitor is connected between the second node and one of the data lines.

Pixel and display device having the same

A pixel includes first, second, and third transistors, first and second capacitors, and an organic light emitting diode. The first transistor has a gate electrode connected to a first node, a first electrode that receives a first power voltage, and a second electrode connected to a second node. The second transistor has a gate electrode that receives a scan signal, a first electrode connected to the first node, and a second electrode connected to a third node. The third transistor has a gate electrode that receives a common control signal, a first electrode connected to the third node, and a second electrode connected to the second node. The organic light emitting diode has a first electrode connected to the second node and a second electrode that receives a second power voltage.

A pixel for a display panel includes first and second transistors, first and second capacitors, and an organic light emitting diode. The first transistor has a gate electrode connected to a first node, a first electrode connected to a first power source, and a second electrode connected to a second node. The second transistor has a gate electrode connected to a scan line, a first electrode connected to the first node, and a second electrode connected to the second node. The organic light emitting diode has a first electrode connected to the second node and a second electrode connected to a second power source. The first capacitor has a first electrode connected to a third power source and a second electrode connected to the first node. The second capacitor has a first electrode connected to a data line and a second electrode connected to the second node.

A pixel includes first to fourth transistors and a driving transistor. The first transistor is connected between a data line and a first node and has a gate electrode to receive a scan signal. The driving transistor is connected between the first node and a second node and has a gate electrode connected to a third node. The second transistor is connected between the second and third nodes and has a gate electrode to receive the scan signal. The third transistor is connected between first power and the first node and has a gate electrode to receive an emission signal. The fourth transistor is connected between the first and second nodes and has a gate electrode to receive an initialization signal. An organic light emitting diode is connected between the second node and second power. A storage capacitor is connected between the first power and third node.

An organic light emitting diode display device includes a display panel and a power supply. The power supply applies a first power supply voltage and a second power supply voltage to a first power supply voltage line. The first power supply voltage line includes a first extension, a second extension, and third extension. The first extension is disposed along a first direction from the first side portion to the second side portion. The first extension has a width that gradually decreases along the first direction. The second extension is disposed along a second direction that is perpendicular to the first direction. The third extension is disposed along a third direction that is opposite to the first direction. The third extension has a width that gradually decreases along the third direction.

Organic light emitting diode display device

In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

Method of manufacturing a thin-film transistor, method of manufacturing a display substrate, and display substrate

Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1.MAn &#x2003;&#x2003;(Formula 1)Herein, M is a metal ion, A is an organic ligand which includes &#x3b1;-substituted carboxylate, and n is a natural number.

Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same

A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.

Display substrate and method of manufacturing the same

A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

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Hwaseong-si, South Korea

Kang-Moon Jo