Electronics and Telecommunications Research Institute

Gwangju Institute of Science and Technology

Samsung Display Co., Ltd.

Hanbat National University Industry-academic Cooperation Foundation

Kang-Jun Baeg

Dong-Yu Kim

Jae Bon Koo

In-Kyu You

Yong-Young Noh

Bogyu Lim

Hyung-Gu Jeong

Seung-Hwan Oh

Hong-Ju Park

Yong Suk Yang

Soon-Won Jung

Su Jae Lee

Taeyoub Kim

Joon-Hyuk Cho

An organic insulating layer composition includes a polymer mixture including 50 parts to 90 parts by volume of an organic polymer and 10 parts to 50 parts by volume of an amorphous polymer, wherein the organic polymer includes at least a first repeating unit and a second repeating unit, the first and second repeating units each being substituted with at least one of fluorine or chlorine, a total number of fluorine and chlorine atoms in the first repeating unit being different from a total number of fluorine and chlorine atoms in the second repeating unit, and an organic solvent.

Organic insulating layer composition, method of forming organic insulating layer, and organic thin film transistor including the organic insulating layer

A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.

Flexible flat cable and manufacturing method thereof

Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Thiazole-based semiconductor compound and organic thin film transistor using the same

Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same.

Composition for organic thin film transistor, organic thin film transistor formed by using the same, and method for forming the organic film transistor

Growing community of inventors

Gwangju, South Korea

Kang-Jun Baeg