Lg Display Co., Ltd.

Kang-Il Kim

Jung-Il Lee

Jeong-Oh Kim

Joon-Young Yang

Jung-Sun Beak

In-Jae Chung

Jung-Ho Bang

Soopool Kim

Gi-Sang Hong

Kye-Chan Song

Young-Kwon Kang

The present disclosure is a method for forming a thin film pattern to form a micron-pattern and a flat display device having the same. The method for forming a thin film pattern includes the steps of forming first to third thin film layers on a substrate in succession, forming a first photoresist pattern on the third thin film layer, patterning the second and third thin film layers using the first photoresist pattern as a mask to form first and second thin film mask pattern having line widths different from each other, forming a second photoresist pattern at a region where the first and second thin film mask patterns do not overlap positioned between the first thin film layer and the second thin film mask pattern, removing the first and second thin film mask patterns, and patterning the first thin film layer using the second photoresist pattern as a mask.

Method for forming thin film pattern and flat display device having the same

A liquid crystal display device includes first and second substrates facing each other, wherein a pixel region is defined on the first and second substrates, first and second grooves formed on an inner surface of the first substrate, a gate line formed in the first groove along a direction, a common line formed in the second groove and parallel to the gate line, a data line crossing the gate line to define the pixel region, a thin film transistor connected to the gate line and the data line, and a light-shielding pattern of a black inorganic material and around the gate line, the data line and the common line.

Liquid crystal display device and method of fabricating the same

A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.

Method of manufacturing liquid crystal display device

Growing community of inventors

Seoul, South Korea

Kang-Il Kim