Samsung Electronics Co., Ltd.

Seoul National University

Kang-hyun Lee

Jae-Ho Kim

Hyoung-sub Kim

Sung-hyun Choi

Seong-won Kim

Young-wook Son

Min-seog Han

Jong-hun Han

Jong-seo Hong

Provided is a wireless communication device including at least one processor configured to transmit a plurality of test signals generated based on different transmission factors to a reception device, and transmit first data to the reception device based on a transmission factor of a first test signal among the plurality of test signals in response to determining a first acknowledgement signal has been received, the first acknowledgement signal corresponding to the first test signal, the transmission of the first data being via a wireless data channel while second data is contemporaneously transmitted via the wireless data channel by another device.

Wireless communication devices for transmitting data using spatial reuse and data communication methods using the same

A method for forming a fine pattern, e.g., for forming the storage electrodes of the capacitors of the memory cells of semiconductor memory devices, which includes the steps of depositing a mask layer on the layer to be patterned, depositing a photoresist layer on the mask layer, patterning the photoresist layer, to thereby form a photoresist pattern, anisotropically etching the mask layer, using the photoresist pattern as an etching mask, to thereby form a mask layer pattern, wherein etch by-products are formed on sidewalls of a composite layer comprised of the photoresist pattern and the mask layer pattern, and, etching the layer to be patterned using the composite layer and the etch by-products as an etching mask, to thereby form a fine pattern. The mask layer is made of a material, e.g., a high-temperature oxide, having different physical properties than that of the photoresist. Further, the anisotropic etching process is preferably carried out by means of a plasma etching process using a mixture of CF.sub.4, CHF.sub.4, and Ar gases, with the amount of the etch by-products being controllably adjusted by the ratio of these gases, and/or by controllably adjusting the time, temperature, and/or pressure parameters of this anisotropic etching process.

Method for forming fine patterns in a semiconductor device

Growing community of inventors

Seoul, South Korea

Kang-hyun Lee