Samsung Electronics Co., Ltd.

Kang-Hyun Baek

Tae-Joong Song

Jin-Ho Kim

Jeong-Ho Lee

Sang-Hoon Baek

Jae-Ho Park

Sang-Kyu Oh

Gi-young Yang

Jong-Sung Jeon

Jin-Hyun Noh

Sung-Hyun Park

Jeong-Bin Kim

Kwan-Jae Song

Sang-Il Jung

A semiconductor device includes first and second memory cell regions adjacent to each other on a substrate. At least one active base and a shallow trench isolation may be sequentially laminated at a boundary between the first and second memory cell regions. First and second active fins are formed on respective sides of the shallow trench isolation, and the first and second active fins projecting from the active base. At least one deep trench isolation is formed on one side of the active base.

Semiconductor device with active fins separated by shallow and deep trench isolations and method for fabricating the same

A layout design system for designing a semiconductor device includes a processor, a storage module storing an intermediate design, and a correction module used by the processor to correct the intermediate design. The intermediate design includes an active region and dummy designs on the active region. Each dummy design includes a dummy structure and dummy spacers disposed at opposite sides of the dummy structure. The correction module is configured to alter widths of regions of at least some of the dummy designs. The corrected design is used to produce a semiconductor device having an active fin, a hard mask layer disposed on the active fin, a gate structure crossing the over the hard mask layer, and a spacer disposed on at least one side of the gate structure. The hard mask layer, and the active fin, are provided with widths that vary due to the dummy designs.

Layout design system, semiconductor device fabricated by using the system and method for fabricating the semiconductor device

In a method, a dummy gate layer structure and a mask layer are formed on a substrate. The mask layer is patterned to form masks. Spacers are formed on sidewalls of the mask. A dummy gate mask is formed between the spacers. The dummy gate layer structure is patterned using the dummy gate mask to form dummy gate structures. The dummy gate structure is replaced with a gate structure. When the mask is formed, an initial layout of masks extending in a first direction is designed. An offset bias in a second direction is provided for a specific region of the initial layout to design a final layout having a width in the second direction varying along the first direction. The mask layer is patterned according to the final layout to form the masks having a width varying along the first direction.

Methods of manufacturing semiconductor devices using masks having varying widths

A semiconductor device includes: active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active fins includes a first region and a second region adjacent to the first direction in the first direction, and a width of the first region in the second direction is different from a width of the second region in the second direction.

Semiconductor device and method of fabricating the same

An example embodiment relates to a light-guiding structure. The light-guiding structure may include a bottom surface and a sidewall defined by a first, a second, and a third insulating layer disposed on a semiconductor substrate. The bottom surface may be parallel to a main surface of the semiconductor substrate and may be disposed in the first insulating layer. The sidewall may penetrate the second and third insulating layers to extend to the first insulating layer, and the sidewall may be tapered with respect to the main surface of semiconductor substrate. The light-guiding structure may be included in a image sensor. The image sensor may be included in a processor-based system.

Light-guiding structure, image sensor including the light-guiding structure, and processor-based system including the image sensor

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Yongin-si, South Korea

Kang-Hyun Baek