Samsung Electronics Co., Ltd.

Kang-Hun Moon

Dong-Suk Shin

Jin-bum Kim

Hoi-Sung Chung

Min-Hee Choi

Yang Xu

Kwan-heum Lee

Su-Jin Jung

Cho-eun Lee

Myung-gil Kang

Jae-young Park

Bo-un Yoon

Sang-Bom Kang

Bon-Young Koo

Ji-Hoon Cha

Jae-Jik Baek

Hyun-Jun Sim

Sun-ghil Lee

Han-ki Lee

Hyun-seung Kim

Hyun-Deok Yang

Sang-Mi Choi

A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

A method of fabricating a semiconductor device is described. The method of fabricating a semiconductor device comprises providing a fin formed to protrude from a substrate and a plurality of gate electrodes formed on the fin to intersect the fin; forming first recesses in the fin on at least one side of the respective gate electrodes; forming an oxide layer on the surfaces of the first recesses; and expanding the first recesses into second recesses by removing the oxide layer. Related devices are also disclosed.

Semiconductor device and method of fabricating the same

A semiconductor device having an improved negative bias temperature instability lifetime characteristic is manufactured by forming a first insulating layer on a substrate, performing a first nitridation on the first insulating layer to form a second insulating layer, and sequentially performing a first and second anneal on the second insulating layer to form a third insulating layer, wherein the second anneal is performed at a higher temperature and with a different gas than the first anneal. A second nitridation is performed on the third insulating layer to form a fourth insulating layer, and a sequential third and fourth anneal on the fourth insulating layer forms a fifth insulating layer. The third anneal is performed at a higher temperature than the first anneal, and the fourth anneal is performed at a higher temperature than the second anneal and with a different gas than the third anneal.

Manufacturing method for semiconductor device

Growing community of inventors

Incheon, South Korea

Kang-Hun Moon