Jsr Corporation

Tri Chemical Laboratories Inc.

Kang-go Chung

Ryuichi Saito

Tatsuya Sakai

Hideki Nishimura

Hisashi Nakagawa

Youhei Nobe

Ryuuichi Saitou

Sanshiro Komiya

Naoto Noda

Maki Nishiguchi

Yohei Nobe

Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained. A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein Ris independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; Ris independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that Rand Rare mutually differing groups; Ris independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).

Ruthenium film-forming material and ruthenium film-forming method

A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL(wherein Lrepresents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF)(L)(L)(wherein Lrepresents a hydrogen atom or halogen atom, Lrepresents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, l is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

Method for producing ruthenium compound

A simple method of producing an organosilicon compound of a formula R(OR)Si&#x2014;R&#x2014;Si(OR)Ris disclosed. The method comprises the following two steps,Y&#x2014;R&#x2014;Y+SiXR-&#x3e;RXSi&#x2014;R&#x2014;SiXRRXSi&#x2014;R&#x2014;SiXR+M(OR),-&#x3e;R(OR)Si&#x2014;R&#x2014;Si(OR)RIn the formulas, Ris methylene, alkylene, or arylene, Ris alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, Ris alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.

Method of producing organosilicon compound

A method of producing an organosilicon compound includes substituting at least an ORgroup of a compound shown by the following general formula (1) to obtain a compound shown by the following general formula (2),Si(OR)Y&#x2014;R&#x2014;Si(OR)Y&#x2003;&#x2003;(1)Si(OR)Y&#x2014;R&#x2014;Si(OR)Y&#x2003;&#x2003;(2).

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Tokyo, Japan

Kang-go Chung