Electronics and Telecommunications Research Institute

Kang Dae Kim

Jae Bon Koo

In-Kyu You

Yong Suk Yang

Seung Youl Kang

Soon Won Jung

Yong-Young Noh

Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.

Organic thin film transistor and method of forming the same

Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.

Resistive memory device and method of fabricating the same

Growing community of inventors

Daejeon, South Korea

Kang Dae Kim