Texas Instruments Corporation

Kaneez Eshaher Banu

Eugene C Davis

Jonathan Philip Davis

Shariq Arshad

Damien Thomas Gilmore

Azghar H Khazi-Syed

Khanh Quang Le

Jonathan Roy Garrett

Sarah Elizabeth Bradshaw

A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

Method of reducing voids and seams in trench structures by forming semi-amorphous polysilicon

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Plano, TX, United States of America

Kaneez Eshaher Banu