Kioxia Corporation

Kanako Shiga

Osamu Matsuura

Hisashi Kato

Kazuhiro Nojima

Shoichi Miyazaki

Yu Hirotsu

Akira Yotsumoto

Mitsunori Masaki

Semiconductor memory device includes: a first and second member each extending in a first direction in a boundary part between a first and second block region and arranged in the first direction; a support pillar arranged between the first and second member at the boundary part; conductive layers separated from one another and arranged in a third direction and split by the first and second member, and the support pillar into a first and second portion; and a memory pillar penetrating through the conductive layers. The support pillar includes a lower and upper pillar. A side face of the lower pillar and an extension of a side face of the upper pillar are displaced from each other in a plane based on a second and the third direction.

Semiconductor memory device

Growing community of inventors

Yokkaichi, Japan

Kanako Shiga