Kabushiki Kaisha Toshiba

Anam Industrial Co., Ltd.

Kanako Sawada

Hideo Aoki

Kenji Takahashi

Keiichi Sasaki

Hee Yeoul Yoo

Atsushi Kurosu

Masatoshi Fukuda

Naoyuki Komuta

Yasuhiro Koshio

Koji Ogiso

According to a manufacturing method of one embodiment, a first solder bump and a second solder bump are aligned and placed in contact with each other, and thereafter, the first and second solder bumps are heated to a temperature equal or higher than a melting point of the solder bumps and melted, whereby a partially connection body of the first solder bump and the second solder bump is formed. The partially connection body is cooled. The cooled partially connection body is heated to a temperature equal to or higher than the melting point of the solder bump in a reducing atmosphere, thereby to form a permanent connection body by melting the partially connection body while removing an oxide film existing on a surface of the partially connection body.

Method for manufacturing semiconductor device

In one embodiment, a first substrate having first solder bumps and a second substrate having second solder bumps are stacked while temporarily tacking the solder bumps to each other, and then a stack is disposed inside a furnace. The gas in the furnace is exhausted to be in a reduced pressure atmosphere, and then a carboxylic acid gas is introduced into the furnace. While increasing a temperature inside the furnace where the carboxylic acid gas is introduced, the gas in the furnace is exhausted to be in a reduced pressure atmosphere at a temperature in a range from a reduction temperature of oxide films by the carboxylic acid gas to lower than a melting temperature of the solder bumps. By increasing the temperature inside the furnace up to a temperature in a range of the melting temperature of the solder bumps and higher, the first solder bumps and the second solder bumps are melted and joined.

A semiconductor device is disclosed which has a first substrate with wiring formed thereon, a second substrate mounted above the first substrate with a conductive plug buried in the second substrate to penetrate between upper and lower surfaces thereof, a plurality of semiconductor chips mounted above the second substrate and having a terminal electrode as electrically connected to the first substrate through the conductive plug of the second substrate, and a resin buried in an empty space or gap between adjacent ones of the plurality of semiconductor chips.

Semiconductor device and method of fabricating the same

A semiconductor device includes a first substrate including an element, a first plug penetrating through the first substrate, made of a conductive material, and electrically connected with the element, a second substrate provided above the first substrate, and electrically connected with the element via the first plug, and a second plug penetrating through the first substrate, made of a non-dielectric material, and being not electrically connected with the second substrate.

Semiconductor device and method of manufacturing the same

A semiconductor device comprises a first substrate including an element, a first plug penetrating through the first substrate, made of a conductive material, and electrically connected with the element, a second substrate provided above the first substrate, and electrically connected with the element via the first plug, and a second plug penetrating through the first substrate, made of a non-dielectric material, and being not electrically connected with the second substrate.

To provide a highly reliable semiconductor device which does not suffer from a crack in its package, a semiconductor chip 12 is mounted on a lead frame 11 with a bonding layer 13 between them, and they are sealed with a sealing resin 14. The lead frame 11 has a base member 11a essentially consisting of Cu and an oxide film 11b essentially consisting of an oxide of the base member 11a formed on the base member and having a thickness of about 50 nm or below. By controlling the oxide film 11b to a thickness of about 50 nm or below, an adhesion strength with the sealing resin 14 is improved greatly, so that a package crack does not occur even if a large thermal load is applied in a reflow process for mounting.

Semiconductor device, and manufacturing method of the same

A method for manufacturing a semiconductor device in which two resin encapsulating sheets, each having a convex portion, are brought into contact with a semiconductor chip. The semiconductor chip is then encapsulated by pressing the chip between the encapsulating sheets.

Growing community of inventors

Yokohama, Japan

Kanako Sawada