Fujimi Incorporated

Kanako Fukuda

Yasuto Ishida

Tomohiko Akatsuka

Hisanori Tansho

Anne Miller

Chiaki Saito

Yoshihiro Kachi

The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below. In the formulas, Xand Xare each independently a hydrogen atom, a hydroxyl group, a carboxyl group, a phosphate group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polyphosphate group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group.

Polishing composition, polishing method using same, and method for producing semiconductor device

A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: One to three of Rto Rin Chemical Formula 1 are alkyl groups, alkynyl groups, alkenyl groups, aryl groups, or arylalkylene groups, one is a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and the remainder are hydrogen atoms. O&#x2014;Ris oxyethylene, oxypropylene, or a random or block conjugate of oxyethylene and oxypropylene. n is an integer of 1 or more. X is an OSOgroup, an OPOgroup, or an OH group.

Polishing composition and polishing method using the same

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Kiyosu, Japan

Kanako Fukuda