Hgst Netherlands, B.v.

Other

Sandisk Technologies Inc.

Kanaiyalal Patel

Jeffrey Scott Lille

He Gao

Charles H Dennison

Thomas R Albrecht

Neil Leslie Robertson

Kurt A Rubin

Jordan Asher Katine

Yang Li

Patrick Braganca

Sue Siyang Zhang

Jui-lung Li

Hamid Balamane

Tsai-Wei Wu

Christian Rene Bonhote

Samuel Weisan Yuan

Vijay Prakash Singh Rawat

Thomas William Clinton

Alice T Wang

Jenn C Chow

A refractory metal-containing etch stop layer, a ruthenium etch stop layer, and a conductive material layer can be sequentially formed over an electrode layer and a selector material layer. A sequence of anisotropic etch processes can be employed to etch the conductive material layer selective to the ruthenium etch stop layer, to etch the ruthenium etch stop layer selective to the refractory metal-containing etch stop layer, and to etch the refractory metal-containing etch stop layer within minimal overetch into the electrode layer. The selector material layer can be subsequently anisotropically etched without exposure to the plasma of etchant gases for etching the refractory metal-containing etch stop layer and the conductive material layer, which may include a fluorine-containing plasma that can damage the selector material.

Memory device containing dual etch stop layers for selector elements and method of making the same

A method of forming a wave guide for a heat assisted magnetic recording slider of a disk drive includes depositing a layer of waveguide material onto a substrate, and depositing a layer of a hard mask material onto the waveguide material. The method then includes depositing a layer of photoresist onto the hard mask material, and exposing the photoresist to produce a hard mask pattern that includes a waveguide pattern. The method also includes stripping the photoresist material leaving the hard mask pattern having a first line edge roughness. The method also includes removing the waveguide material not covered by the hard mask, the waveguide having sidewalls which having a line edge roughness which is substantially equal to the first line edge roughness. Also disclosed is an apparatus for accomplishing the method.

Method and apparatus for magnetic recording head having a waveguide

A method for patterning a substrate is disclosed. Depressions are patterned into a resist layer over a substrate. A mask layer is deposited over the resist layer at least partially filling the depressions. The mask layer is etched to expose a top surface of the resist layer and leaving at least a portion of the mask layer in the depressions of the resist layer, wherein the mask layer over said top surface of the resist layer is etched at a faster rate than said mask layer in the depressions of the resist layer. Exposed portions of the resist layer are removed to expose portions of the substrate. Exposed portions of the substrate are etched.

Pattern tone reversal

A method of fabricating workpieces includes one or more layers on a substrate that are masked with an ion implantation mask comprising two or more layers. The mask layers include a first mask layer closer to the substrate, and a second mask layer on the first mask layer. The method also comprises ion implanting one or more of the layers on the substrate. Ion implantation may form portions with altered physical properties from the layers under the mask. The portions may form a plurality of non-magnetic regions corresponding to apertures in the mask.

Method of fabricating a mask structure for patterning a workpiece by ions

A method for sidewall spacer line doubling uses thermal atomic layer deposition (ALD) of a titanium oxide (TiOx) spacer layer. A hardmask layer is deposited on a suitable substrate. A mandrel layer of diamond-like carbon (DLC) is deposited on the hardmask layer and patterned into stripes with tops and sidewalls. A layer of TiOx is deposited, by thermal ALD without the assistance of plasma or ozone, on the tops and sidewalls of the mandrel stripes. Thermal ALD of the TiO, without energy assistance by plasma or ozone, has been found to cause no damage to the DLC mandrel stripes. After removal of the TiOx from the tops of the mandrel stripes and removal of the mandrel stripes, stripes of TiOare left on the hardmask layer and may be used as an etch mask to transfer the pattern into the hardmask layer.

Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide

A method for manufacturing a magnetic read sensor at very narrow track widths. The method uses an amorphous carbon mask layer to pattern the sensor by ion milling, rather than a mask constructed of a material such as photoresist or DURIMIDE&#xae; which can bend over during ion milling at very narrow track widths. By using the amorphous carbon layer as the masking layer, the trackwidth can be very small, while avoiding this bending over of the mask that has been experienced with prior art methods. In addition, the track-width can be further reduced by using a reactive ion etching to further reduce the width of the amorphous carbon mask prior to patterning the sensor. The method also allows extraneous portions of the side insulation layer and hard bias layer to be removed above the sensor by a light CMP process.

Method for manufacturing a magnetic read sensor with narrow track width using amorphous carbon as a hard mask and localized CMP

A magnetic head according to one embodiment includes a side gap layer comprising primarily silicon nitride, wherein outer sides of the side gap layer taper away from one another from a leading end of the side gap layer towards a trailing end of the side gap layer; a seed layer above the silicon nitride side gap layer; and a magnetic pole on the seed layer. A method for forming a magnetic head according to one embodiment includes etching a channel in a silicon oxide layer; forming a side gap layer comprising primarily silicon nitride in the channel; forming a seed layer above the side gap layer; plating a pole on the seed layer; and removing the silicon oxide layer by wet etching. Additional systems and methods are also presented.

Wet etching silicon oxide during the formation of a damascene pole and adjacent structure

A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.

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Fremont, CA, United States of America

Kanaiyalal Patel