Sumco Corporation

Kan Yoshitake

Haruki Shoji

Yusuke Kurozumi

Motoki Goto

Kimitaka Okamoto

Hitoshi Takamiya

Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member.

Epitaxial growth apparatus

A method for producing an epitaxial silicon wafer by applying a vapor deposition on a silicon wafer is disclosed. A vapor deposition apparatus in which the vapor deposition is conducted at least includes a chamber and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve including a diaphragm that allows or blocks a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-free anticorrosion alloy material is used for the diaphragm. When a maintenance work is to be done inside the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.

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Tokyo, Japan

Kan Yoshitake