Vanguard International Semiconductor Corporation

Kan-Sen Chen

Jian-Hsing Lee

Shao-Chang Huang

Chih-Cherng Liao

Chia-Hao Lee

Yeh-Ning Jou

Ching-Yi Hsu

Chieh-Yao Chuang

Yu-Chen Wu

Hsien-Feng Liao

Yun-Chou Wei

Yung-Lung Chou

Ting-Yu Chang

Chung-Hsuan Wang

Sing-Lin Wu

Nai-Lun Cheng

A semiconductor structure is provided. At least one first well region is disposed in a semiconductor substrate and has a first conductivity type. At least one gate of a transistor is disposed over the first well region and extends in a first direction. At least one second well region and at least one third well region are disposed on opposite sides of the first well region and extend in the first direction. The second and third well regions have a second conductivity type. A first shielding structure is disposed on at least one end of the gate and partially overlaps the first well region in a vertical projection direction. The first shielding structure is separated from the end of the gate. A bulk ring is disposed in the semiconductor substrate and surrounds the gate, the second well region, the third well region, and the first shielding structure.

Semiconductor structure with a gate and a shielding structure

The present disclosure relates to a semiconductor device. The semiconductor device includes a gate structure disposed on a semiconductor substrate, a sidewall spacer disposed on sidewalls of the gate structure, a lightly-doped source/drain region formed in the semiconductor substrate on opposite sides of the gate structure, a source/drain region formed in the semiconductor substrate on opposite sides of the sidewall spacer, a halo implant region formed in the semiconductor substrate below the gate structure and adjacent to the lightly-doped source/drain region, and a counter-doping region formed in the semiconductor substrate below the gate structure and between the lightly-doped source/drain region and the halo implant region. The dopant concentration of the counter-doping region is lower than the dopant concentration of the halo implant region.

Semiconductor device and method for forming the same

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Taipei, Taiwan

Kan-Sen Chen