Raytheon Company

Kamal Tabatabaie Alavi

Christopher J MacDonald

Adrian D Williams

Thomas E Kazior

John Michael Bedinger

Kezia Cheng

Michael A Moore

Robert B Hallock

Kenneth A Wilson

Fikret Altunkilic

Jeffrey R LaRoche

Kiuchul Hwang

Kelly P Ip

Christolpher J Macdonald

A Field Effect Transistor (FET) structure having: a semiconductor; a first electrode structure; a second electrode structure; and a third electrode structure for controlling a flow of carriers in the semiconductor between the first electrode structure and the second electrode structure; a dielectric structure disposed over the semiconductor and extending horizontally between first electrode structure, the second electrode structure and the third electrode structure; and a fourth electrode passing into the dielectric structure and terminating a predetermined, finite distance above the semiconductor for controlling an electric field in the semiconductor under the fourth electrode structure.

Electrode structure for field effect transistor

A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap. A dielectric structure is disposed over the semiconductor, having: a first portion disposed under the second end of the field plate structure; and, a second, thinner portion under the gap.

Transistor having low capacitance field plate structure

Apparatus and method for heating a wafer having semiconductor material. The apparatus includes: a chamber, a source of radiant heat; a source of gas; and a susceptor disposed in the chamber to receive and absorb heat radiated by the source of radiant heat; the susceptor having an opening therein to allow a flow of gas to pass from the source of gas to pass through an interior region of the susceptor and over the wafer.

Rapid thermal anneal apparatus and method

A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

Method for controlling the amount of radiation having a predetermined wavelength to be absorbed by a structure disposed on a semiconductor

A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing 'dummy' fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of 'dummy' fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the &#x201c;dummy&#x201d; fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the &#x201c;dummy&#x201d; fill elements into microwave lossy &#x201c;dummy&#x201d; fill elements.

Monolithic microwave integrated circuit (MMIC) and method for forming such MMIC having rapid thermal annealing compensation elements

According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 10ohm-centimeter, and a defect density less than 0.5/centimeter.

Growing community of inventors

Sharon, MA, United States of America

Kamal Tabatabaie Alavi