Asm Japan K.k.

Samsung Electronics Co., Ltd.

Kamal Kishore Goundar

Kiyoshi Satoh

Nobuo Matsuki

Yoshinori Morisada

Tadashi Kumakura

Masashi Yamaguchi

Kyu Tae Na

Eun Kyung Baek

A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.

Method of forming a carbon polymer film using plasma CVD

A method of forming a transparent hydrocarbon-based polymer film on a substrate by plasma CVD includes: introducing a main gas consisting of a hydrocarbon gas (CH, wherein &#x3b1; and &#x3b2; are natural numbers) and an inert gas at a flow ratio (R) of CH/inert gas of 0.25 or less into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-based polymer film on the substrate by plasma polymerization of the gas at a processing temperature (T) wherein T&#x2266;(&#x2212;800R+500).

Method of forming a high transparent carbon film

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and COgas or Hgas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

Method of forming carbon polymer film using plasma CVD

A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

Method of forming silicon carbide films

To deposit silicon onto a substrate, there is introduced into a reaction zone a gas including source gases of silicon, carbon, nitrogen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition. The average power on the substrate is substantially constant. A ratio of low frequency RF power to total RF power is less than about 0.5.

A film is formed on a semiconductor substrate where a copper layer is to be formed and in contact with the film, by a method including the steps of: (i) introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; (ii) depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; (iii) introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and (iv) depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma.

Two-step formation of etch stop layer

A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes: introducing a raw material gas containing silicon, carbon, and hydrogen, an inert gas, and optionally an hydrogen source gas, into a reaction chamber at a predetermined mixing formulation of the raw material gas to the inert gas; applying radio-frequency power at the mixing formulation, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and continuously applying radio-frequency power at a mixing formulation reducing the raw material gas and the hydrogen source gas if any, thereby curing the silicon carbide film to give a dielectric constant and a leakage current lower than those of the curable silicon carbide film.

Method of manufacturing silicon carbide film

A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.

To deposit silicon carbide into a substrate, there is introduced into a reaction zone a gas including source gas of silicon, carbon, oxygen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition.

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Tama, Japan

Kamal Kishore Goundar