Koninklijke Philips Corporation N.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Imec Vzw

Philips Lighting Holding B.v.

Rijksuniversiteit Groningen

Lumileds Holding B.v.

Kamal Asadi

Johannes Franciscus Maria Cillessen

Paulus Wilhelmus Maria Blom

Bert De Boer

Dagobert Michel De Leeuw

Wilhelmus Cornelis Keur

Frank Verbakel

Patrick John Baesjou

Cornelis Eustatius Timmering

Johan Hendrik Klootwijk

Hendrik Johannes Boudewijn Jagt

Durandus Kornelius Dijken

Jianghong Yu

Manuela Lunz

Hans Kroes

Renatus Hendricus Maria Sanders

Dagobert Michael De Leeuw

Disclosed is a method of manufacturing a partially freestanding two-dimensional crystal film ('), the method comprising providing a substrate () carrying a catalyst layer () for forming the two-dimensional crystal layer on a first surface; forming the two-dimensional crystal film on the catalyst layer; covering at least the two-dimensional crystal film with a protective layer (); etching a cavity () in a second surface of the substrate, the second surface being opposite to the first surface, said cavity terminating on the catalyst layer; etching the exposed part of the catalyst layer from the cavity; and removing the protective layer, thereby obtaining a two-dimensional crystal film that is freestanding over said cavity. A device manufactured in this manner is also disclosed.

Method of manufacturing partially freestanding two-dimensional crystal film and device comprising such a film

The invention provides a color conversion arrangement, a lighting unit, a solid state light emitter package, a luminaire and a specific use of a graphene layer. A color conversion arrangement () with the first aspect comprises a first luminescent layer (), a supporting layer () and a first graphene layer (). The color conversion arrangement () is for converting light of a first color to light of another color. The first luminescent layer () comprises a first luminescent material which absorbs a portion of light of a first spectral distribution comprising the first color and converts at least a portion of the absorbed light towards light of a second spectral distribution. The supporting layer () supports the luminescent layer (). The first graphene layer () thermally conducts heat in a lateral direction such that temperature differences in the color conversion arrangement () are reduced. Different arrangements of the layers of the color conversion arrangement () are provided.

Color conversion arrangement, a lighting unit, a solid state light emitter package and a luminaire

The present invention relates to lighting module, wherein a light exit window () of the lighting module is engraved such that the output color temperature of said lighting module is tuned. The present invention also relates to a method for tuning an output color temperature of a lighting module, said method comprising providing said lighting module comprising a light exit window (), and a light source arranged to provide light having an optical path through said light exit window (), said lighting module having a first output color temperature; and engraving a surface of said light exit window () such that the output color temperature of said lighting module is tuned to a second output color temperature.

Light emitting diode module with improved light characteristics

Method for producing a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition ZnMgO with 1-350 ppm Al, wherein x is in the range of 0&#x3c;x&#x2266;0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Method for producing light emitting semiconductor device

Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Ferro-electric device and modulatable injection barrier

The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0&#x3c;x&#x2266;0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

II-VI based light emitting semiconductor device

Described is an (organic) light-emitting diode ((O)LED) wherein the light-emitting layer comprises a blend of an electroluminescent semiconducting material with a ferro-electric material. Either of the electrodes forms a modulatable injection barrier with the ferro-electric material, the modulation requiring a voltage Vserving to polarize or repolarize the ferro-electric material. With Vbeing larger than the voltage Vrequired for light emission, the (O)LED can be turned 'on' or 'off' by applying a pulse voltage to (re)polarize the ferro-electric material.

Modulatable light-emitting diode

Growing community of inventors

Eindhoven, Netherlands

Kamal Asadi