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Santa Clara, CA, United States of America

Kalyan C Kavalipurapu

Average Co-Inventor Count = 2.46

ph-index = 3

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 52

Kalyan C KavalipurapuMichele Piccardi (9 patents)Kalyan C KavalipurapuXiaojiang Guo (9 patents)Kalyan C KavalipurapuAllahyar Vahidimowlavi (6 patents)Kalyan C KavalipurapuMark Alan Helm (3 patents)Kalyan C KavalipurapuErwin E Yu (3 patents)Kalyan C KavalipurapuJae-Kwan Park (3 patents)Kalyan C KavalipurapuWilliam Kammerer (2 patents)Kalyan C KavalipurapuFeng Q Pan (1 patent)Kalyan C KavalipurapuQiang Tang (1 patent)Kalyan C KavalipurapuShigekazu Yamada (1 patent)Kalyan C KavalipurapuJaekwan Park (1 patent)Kalyan C KavalipurapuCairong Hu (1 patent)Kalyan C KavalipurapuKalyan C Kavalipurapu (24 patents)Michele PiccardiMichele Piccardi (79 patents)Xiaojiang GuoXiaojiang Guo (55 patents)Allahyar VahidimowlaviAllahyar Vahidimowlavi (22 patents)Mark Alan HelmMark Alan Helm (123 patents)Erwin E YuErwin E Yu (24 patents)Jae-Kwan ParkJae-Kwan Park (20 patents)William KammererWilliam Kammerer (4 patents)Feng Q PanFeng Q Pan (102 patents)Qiang TangQiang Tang (96 patents)Shigekazu YamadaShigekazu Yamada (74 patents)Jaekwan ParkJaekwan Park (9 patents)Cairong HuCairong Hu (1 patent)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Micron Technology Incorporated (19 from 38,023 patents)

2. Intel Corporation (5 from 54,858 patents)


24 patents:

1. 12322444 - Memory devices with controlled wordline ramp rates, and associated systems and methods

2. 11322209 - Memory devices including voltage generation systems

3. 11315642 - Systems and methods providing improved calibration of memory control voltage

4. 11205492 - Responding to power loss

5. 11183247 - Boosted channel programming of memory

6. 11037636 - Memory devices including voltage generation systems

7. 11004513 - Memory devices with controlled wordline ramp rates, and associated systems and methods

8. 10984875 - Systems and methods providing improved calibration of memory control voltage

9. 10923199 - Peak current management in a memory array

10. 10892022 - Responding to power loss

11. 10796773 - Memory devices including voltage generation systems

12. 10783941 - Floating block select based programming time (tPROG)

13. 10741260 - Systems and methods providing improved calibration of memory control voltage

14. 10546641 - Memory devices with controlled wordline ramp rates, and associated systems and methods

15. 10431310 - Boosted channel programming of memory

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