Seagate Technology Incorporated

Lam Research Corporation

Lab Research Corporation

Kalman Pelhos

Eric A Hudson

Mark Henry Wilcoxson

Michael Allen Seigler

Edward Charles Gage

Chubing Peng

Merrett Wong

Dorothea Buechel

Hyung Joo Shin

Hyunjong Shim

David S Kuo

Kim Yang Lee

William Albert Challener

Werner Scholz

Timothy John Klemmer

Julius Kurt Hohlfeld

Nils Jan Gokemeijer

Christophe Daniel Mihalcea

Yufeng Hu

A method of forming a feature in a stack comprising a dielectric material on a substrate is provided. An etch plasma is generated from an etch gas, exposing the stack to the etch plasma and partially etching the feature in the stack. The stack is primed. A protective film is deposited on sidewalls of the feature by repeating for a plurality of cycles the steps of exposing the stack to a first reactant, allowing the first reactant to adsorb onto the stack, and exposing the stack to a second reactant, wherein the first and second reactants react with one another to form the protective film over the stack. The etching, priming, and depositing a protective film are repeated until the feature is etched to a final depth.

Method for etching an etch layer

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.

Mask shrink layer for high aspect ratio dielectric etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.

Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch

A light source and a waveguide are mounted on a recording head slider. Light rays are emitted from the light source into the waveguide. The waveguide may include two core layers for light ray transmission. The first core layer enhances light coupling efficiency from the light source to the second core layer. The second core layer transforms a profile of the light. The waveguide may include a tapered portion with a narrow opening near the light source and a wider opening near the tapered portion exit. The light rays passing through the waveguide may be directed toward a collimating mirror. The collimating mirror makes the light rays parallel or nearly parallel and re-directs the light rays to a focusing mirror. The focusing mirror focuses the collimated light rays to a spot on a magnetic media disc.

Light delivery waveguide

Methods comprising providing a pre-patterned substrate having an array of thick walls, depositing a conforming layer on the pre-patterned substrate, etching the conforming layer from the top of the thick walls and the space between the walls, and etching the thick walls while leaving thin walls of conforming layer.

Ultra thin alignment walls for di-block copolymer

An apparatus comprises a waveguide, an optical transducer for coupling electromagnetic radiation from the waveguide to a point adjacent to an air bearing surface to heat a portion of a storage medium, and a first wire positioned adjacent to the air bearing surface, wherein current in the wire produces a magnetic field in the heated portion of the storage medium.

Dual wire integrated WAMR/HAMR writing head

A method of fabricating a bit patterned storage medium includes obtaining a substrate having a magnetic layer and forming a mask over the magnetic layer. The magnetic layer is etched through the mask using a reactive ion etch. The etch rate of the mask is reduced by introducing a gas into the reactive ion etch.

Method of reducing an etch rate

A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current pulse generates a thermoelectric heat flow pulse between the thermoelectric device and the memory cell.

Memory element with thermoelectric pulse

A magnetic storage media comprises a substrate supporting the layer of magnetic media having a tilted C-axis greater than approximately 25&#xb0; with respect to surface normal and having a magnetic easy axis tilted at an angle at approximately greater than 30&#xb0; from the substrate surface normal. The media includes an oblique deposited seedlayer structure directing tilted C-axis growth of the magnetic material layer independent of the angle of deposition of the magnetic material layer. The orientation C-axis and the magnetic easy axis of the media may be organized into circumferential or radial patterns on the substrate surface, and additionally may possess azimuthal symmetry.

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San Jose, CA, United States of America

Kalman Pelhos